We report a new record total-area efficiency of 19Á9% for CuInGaSe 2 -based thin-film solar cells. Improved performance is due to higher fill factor. The device was made by three-stage co-evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented.

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In May 2010 the United States National Science Foundation sponsored a two-day workshop to review the state-of-the-art and research challenges in photovoltaic (PV) manufacturing. This article summarizes the major conclusions and outcomes from this workshop, which was focused on identifying the science that needs to be done to help accelerate PV manufacturing. A significant portion of the article focuses on assessing the current status of and future opportunities in the major PV manufacturing technologies. These are solar cells based on crystalline silicon (c-Si), thin films of cadmium telluride (CdTe), thin films of copper indium gallium diselenide, and thin films of hydrogenated amorphous and nanocrystalline silicon. Current trends indicate that the cost per watt of c-Si and CdTe solar cells are being reduced to levels beyond the constraints commonly associated with these technologies. With a focus on TW/yr production capacity, the issue of material availability is discussed along with the emerging technologies of dye-sensitized solar cells and organic photovoltaics that are potentially less constrained by elemental abundance. Lastly, recommendations are made for research investment, with an emphasis on those areas that are expected to have cross-cutting impact.

Sodium incorporation into Cu2ZnSnSe4 (CZTSe) substantially improves the device efficiency by enhancing the open-circuit voltage (VOC) and fill factor. Sodium increases hole density, makes the acceptor shallower, shifts the Fermi level lower, and leads to higher built-in voltage and, consequently, higher VOC. Sodium reduces the concentration of certain deep recombination centers, which further benefits VOC. The increase of hole density and mobility enhances the CZTSe conductivity leading to higher fill factor. Sodium causes smaller depletion width, hence, lower short-circuit current. The minority-carrier lifetime decreases slightly after sodium is incorporated via the Mo-coated soda-lime glass, although adding NaF provides some amelioration.

Time-resolved photoluminescence measurements on polycrystalline Cu(In,Ga)Se2 (CIGS) thin films corresponding to high-efficiency solar cells indicate recombination lifetimes as long as 250ns, far exceeding previous measurements for this material. The lifetime decreases by two orders of magnitude when exposed to air. Charge separation effects can be observed on CIGS∕CdS∕ZnO devices in low-intensity conditions. The ZnO layer forms a robust junction critical for charge separation, whereas the CdS layer alone forms a much weaker junction. Recombination at the CIGS/CdS interface is negligible. The results significantly adjust the previous picture of recombination in CIGS solar cells.

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