A break was found in the dependence of the diffusion coefficient of zinc on the composition of GaAsl-,P, a t a phosphorus content in the solid solution rj NN 0.4. The same break is observed in the dependence of the Fermi level on the composition of GaAsl-,P,.The experimental data obtained agree with the theory. The diffusion of zinc in inhomogeneous solid solutions of GaAsl-,P, (gradual heretojunctions) was found to increase which can be attributed to the effect of an internal electric field produced by a gradient in the heterojunction energy gap width as well as to a coordinate dependence of the zinc diffusion coefficient.In GaAsl -,P, wurde in der Abhangigkeit des Zinkdiffusionskoeffizienten von der Zusammensetzung bei einem Phosphorgehalt im Mischkristall von 7 m 0,4 ein Sprung gefunden. Derselbe Sprung wird in der Abhangigkeit des Ferminiveaus von der Zusammensetzung von GaAsl -,P, beobachtet. Die experimentellen Ergebnisse stimmen mit der Theorie iiberein. Es wurde gefunden, da13 die Diffusion von Zink in inhomogenen Mischkristallen von GaAsl -,P, (allmahlicher Heteroiibergang) ansteigt, was sowohl den EinfluB eines inneren elektrischen Feldes, das durch einen Gradienten in der Energieliicke des Heteroiiberganges hervorgerufen wird, als auch einer Koordinationsabhangigkeit des Zinkdiffusionskoeffizienten zugeschrieben werden kann.
Electrical migration of lithium and copper in gallium arsenide is studied. It is shown t h a t lithium (between 740 and 980 "C) and copper (between 820 and lo00 "C) migrate in n-type gallium arsenide as positive ions with a charge of less than +l. The decrease of the ionic charge is due to ion drag by the electrons. In heavily doped p-type gallium arsenide, copper again migrates in the form of positive ions but in this case with a charge close to il. This is due to the ion drag by the electrons being almost balanced by the drag from
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