The Effect of Applied Electric Field on Diffusion of Impurities in Gallium Arsenide

Boltaks, B. I.; Dzhafaröv, T. D.

doi:10.1002/pssb.19670190221

Cited by 15 publications

(5 citation statements)

References 8 publications

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“…Tuck and Jay (1978) reported a dip in some of the profiles at the end of the initial sharply falling part of the profile. 'Similar dips have been reported in the diffusion of copper, gold aQd silver in InAs (Boltaks et a f 1968, Rembeza 1967, Boltaks et a1 1967 and silver in GaAs (Tuck and Adegboyega 1980). The effect was observed quite unambiguously in the present work, although not in a reproducible manner.…”

Section: Experiments On Undoped Materials With No Addedphosphorussupporting

confidence: 90%

The diffusion of silver in InP

Chauoui¹,

Tuck²

1983

J. Phys. D: Appl. Phys.

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The paper describes a large number of experiments in which radiotracer silver was diffused into the III-V semiconductor InP over a wide range of experimental conditions. Diffusion profiles were plotted. The diffusions were performed over the temperature range 550-900 degrees C for diffusion times between 2 min and 97 h. The ambient phosphorus vapour pressure was also varied over a wide range. Most of the experiments were carried out on undoped material, but doped n-type, p-type and semi-insulating materials were also used. The results cannot be explained by any simple diffusion theory and it would appear that a rather complex set of phenomena is in operation during the diffusions. The variation of surface concentration with phosphorus vapour pressure implies either that the silver atoms occupy phosphorus sites or that they are involved in some complex when occupying lattice sites. The latter explanation is considered the more likely and the complex (VpAgInVp) is proposed as a possibility. The very fast diffusion which is observed strongly suggests that the silver atoms diffuse in the interstitial state and the ion Ag1+ is proposed as the most likely. At lower diffusion temperatures most of the atoms in the bulk of the semiconductor probably remain interstitial, but at higher temperature, some of them join the lattice.

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Section: Experiments On Undoped Materials With No Addedphosphorussupporting

confidence: 90%

The diffusion of silver in InP

Chauoui¹,

Tuck²

1983

J. Phys. D: Appl. Phys.

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“…This is equivalent to the reduction of the formation energy of vacancy with the increase of impurity concentration, and may be localized. It has been reported, in fact, that the formation energy of vacancy decreases exponentially with the bulk impurity concentration (24). Their empirical equation for the reduction of the formation energy of vacancy is, however, not applicable for the present work.…”

Section: Discussionmentioning

confidence: 74%

Effects of Diffusion‐Induced Strain and Dislocation on Phosphorus Diffusion into Silicon

Matsumoto

Akao

Kohiyama

et al. 1978

J. Electrochem. Soc.

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The diffusion-induced strain and dislocation effects on the diffusion of phosphorus into silicon have been investigated. When phosphorus is diffused singly, the diffusion coefficient of phosphorus increases considerably at high concentrations. While, when phosphorus and germanium are diffused simultaneously, fewer dislocations are observed and the diffusion-induced strain is compensated. In strain-compensated diffusion, concentration profiles of phosphorus agree well with the theoretical curves (erfc). It is shown that the enhancement of the diffusion coefficient of phosphorus at high concentrations is attributed to the diffusion-induced strain. Besides, dislocations retard the diffusion front by absorbing excess vacancies, showing the opposite effect of strain.,Effects of diffusion-induced dislocations on diffusion of impurities into silicon have been studied extensively by many investigators. They have reported that diffusion of phosphorus above a certain critical surface concentration or a total amount of dopant

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“…Since self-diffision measurements were first performed, the in-diffhsion of radioactive isotopes from the surface has been a widely used approach. (Boltaks, et al 1975). The results showed kink and tail diffision profiles over…”

Section: Radiotracer Measurementsmentioning

confidence: 93%

“…Figure 2-2: Radiotracer measurements of Zn diffusion into GaAs using a low Zn surface concentration (Boltaks, et al 1975) In addition to the issues related to radioactivity, the radiotracer method requires introduction of material from one of the sample boundaries usually by ion implantation or deposition. Implantation induces damage (and thus def&s), and deposition is very susceptible to surface contamination such as oxygen or other impurities at the surface, both of which can dramatically influence the self-diffusion rate.…”

Section: Radiotracer Measurementsmentioning

confidence: 99%

Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

Norseng

1999

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From fitting of the Zn diffision model to the SIMS profiles the effective difYusivityof Ga interstitiaks, D~~, and substitutional Zn, D~~, were deduced where and (4-1) (4-2). The Zn diffbsivity normalized to intrinsic conditions (n=p==i and P=latm) is given by (4-3) From fitting of the disordered Ga profile the effective diffu.sivity of the Ga interstitial, D~[ was deduced. From this, the Ga self-diffhsion in the lattice D&'and intrinsic Ga interstitial diffusivity Dl~,r were calculated using D?: =Deff P'q "" 2.22015e22 and 66 (4-4).

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The Effect of Applied Electric Field on Diffusion of Impurities in Gallium Arsenide

Cited by 15 publications

References 8 publications

The diffusion of silver in InP

The diffusion of silver in InP

Effects of Diffusion‐Induced Strain and Dislocation on Phosphorus Diffusion into Silicon

Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

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