Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

Abstract

From fitting of the Zn diffision model to the SIMS profiles the effective difYusivityof Ga interstitiaks, D~~, and substitutional Zn, D~~, were deduced where and (4-1) (4-2). The Zn diffbsivity normalized to intrinsic conditions (n=p==i and P=latm) is given by (4-3) From fitting of the disordered Ga profile the effective diffu.sivity of the Ga interstitial, D~[ was deduced. From this, the Ga self-diffhsion in the lattice D&'and intrinsic Ga interstitial diffusivity Dl~,r were calculated using D?: =Deff P'q "" 2.22015e22 and 66 (4-4).