Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη

Arseni, K. A.; Boltaks, B. I.; Dzhafaröv, T. D.

doi:10.1002/pssb.19690350258

Cited by 25 publications

(12 citation statements)

References 2 publications

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“…The outstanding feature of the results is the very fast diffusion of silver in InP even at low temperature so that for relatively short diffusion times the diffusant penetrates the whole of the sample. This same point was noted by Arseni and Boltaks (1969) and by Tuck and Jay (1978), and both groups came to the conclusion that such rapid diffusion was possible only by the movement of interstitial silver, Tuck and Jay analysed their results in terms of a substitutional-interstitial diffusion mechanism in which it was assumed that silver atoms could exist either interstitially or on a lattice site. They assumed that the substitutional atom was immobile but that the interstitial atom could move very fast through the crystal and eventually join the lattice by the operation of the equation:…”

Section: Experiments With No Addedphosphorussupporting

confidence: 54%

“…Diffusion studies employing radiotracer silver have arrived at much the same conclusion. Arseni and Boltaks (1969) carried out experiments over the range 50&900 "C and produced profiles which resembled those previously reported for silver in GaAs (Boltaks er ai 1967). The temperature range was extended to lower temperatures by Tuck and Jay (1978), who obtained the surprising result that even at 250 "C silver can diffuse hundreds of microns below the specimen surface, during a 1 h diffusion.…”

Section: Introductionmentioning

confidence: 52%

“…Both groups came to the conclusion that this very fast diffusion is due to the motion of interstitial atoms. They disagreed, however, about the effect on the profile of an excess overpressure of phosphorus; Arseni and Boltaks (1969) reported that excess phosphorus increases the solubility of silver in InP, while Tuck and Jay (1978) suggested the reverse.…”

Section: Introductionmentioning

confidence: 99%

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The diffusion of silver in InP

Chauoui¹,

Tuck²

1983

J. Phys. D: Appl. Phys.

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The paper describes a large number of experiments in which radiotracer silver was diffused into the III-V semiconductor InP over a wide range of experimental conditions. Diffusion profiles were plotted. The diffusions were performed over the temperature range 550-900 degrees C for diffusion times between 2 min and 97 h. The ambient phosphorus vapour pressure was also varied over a wide range. Most of the experiments were carried out on undoped material, but doped n-type, p-type and semi-insulating materials were also used. The results cannot be explained by any simple diffusion theory and it would appear that a rather complex set of phenomena is in operation during the diffusions. The variation of surface concentration with phosphorus vapour pressure implies either that the silver atoms occupy phosphorus sites or that they are involved in some complex when occupying lattice sites. The latter explanation is considered the more likely and the complex (VpAgInVp) is proposed as a possibility. The very fast diffusion which is observed strongly suggests that the silver atoms diffuse in the interstitial state and the ion Ag1+ is proposed as the most likely. At lower diffusion temperatures most of the atoms in the bulk of the semiconductor probably remain interstitial, but at higher temperature, some of them join the lattice.

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Section: Experiments With No Addedphosphorussupporting

confidence: 54%

Section: Introductionmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 99%

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The diffusion of silver in InP

Chauoui¹,

Tuck²

1983

J. Phys. D: Appl. Phys.

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“…These relations correlate with the composition dependence of the energy gap width of the corresponding solid solutions. The results obtained can be explained within the framework of the dissociative mechanism of diffusion, in which the nature of the dependence of D on the composition of the solid solution is determined by the variation of the Fermi level position with composition [51].…”

mentioning

confidence: 96%

“…Fig. 13 shows the diffusion coefficients of zinc and cadmium versus the cornposition of InAs, -,P,, of those of zinc versus the composition of GaAsl-,P, [51] and A1,Gal-,As [77] measured by the radioactive tracer technique (isoconcentrational diffusion). I n the case of theGaAsl-,P, and Al,Gal-,As solid solutions, the relations D = f ( x ) reveal a break a t 5 = 0.4, while for InAsl -%PX and Inl-,Ga,As D varies monotonously with composition.…”

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confidence: 99%

Atomic diffusion in semiconductor epitaxial structures

Dzhafaröv

1977

Phys. Stat. Sol. (a)

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On a Possibility of Determining Nonuniformities in Al_xGa_1−xAs Solid Solution Compositions

Dzhafaröv¹,

Demakov²,

Rumyantseva³

1974

Cryst Res and Technol

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Both surface and bulk nonuniformities in A1,Gq -,As solid solution compositions were determined by surface radiography of epitaxial A1,Gal -,As-GaAs heterojunctions with diffused radioactive Zne5 atoms. properties of epitaxial films depend to a considerable extent on uniformity of their composition, impurity distribution, structural defects etc. The distribution of solid solution components and impurities is usually studied by X-ray electron probe analysis ( DZHAFAROV et al. 1967DZHAFAROV et al. , 1969 as well as by the methods based on electrical and radioactive measurements on individual layers (BOLTAKS) It is often desirable to obtain the distribution pattern of composition uniformity over the surface. Using for this purpose the method of contact radiography (DRITZ et al.), we succeeded in determining the nonuniformity in the composition of A1,Gal -,As solid solutions. It should be noted that the use of autoradiography in its conventional form is not always possible because of difficulties encountered in finding convenient isotopes in the systems of interest (in particular, in the A1,Gal -,As solid solutions). These difficulties can be avoided by diffusing into the surface of the sample radioactive tracer atoms the distribution of which would be sensitive to nonuniformities in composition. Radiography involving tracer atoms permits to obtain the pattern of distribution of solid solution components both on the surface and in the bulk of the crystal.The method used is essentially as follows. First, brief diffusion is effected into the sample under study of a radioactive impurity with sufficient high solubility. Next, the sample is subjected t o contact radiography with subsequent photometry. Since the surface concentration of impurity depends on solid solution composition (ARSENI et al.), a change in composition over the surface should produce a corresponding change in concentration of the radioactive isotope of impurity, and hence, a change in the density of blackening over the surface.The above method of locating nonunformities in solid solution compositions was tested on A1,Gal -,As-GaAs-heterostructures.The heterojunctions were

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Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs_1−ηP_η and GaAs_1−nP_η

Cited by 25 publications

References 2 publications

The diffusion of silver in InP

The diffusion of silver in InP

Atomic diffusion in semiconductor epitaxial structures

On a Possibility of Determining Nonuniformities in Al_xGa_1−xAs Solid Solution Compositions

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Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη

Cited by 25 publications

References 2 publications

The diffusion of silver in InP

The diffusion of silver in InP

Atomic diffusion in semiconductor epitaxial structures

On a Possibility of Determining Nonuniformities in AlxGa1−xAs Solid Solution Compositions

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Product

Resources

About

Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs_1−ηP_η and GaAs_1−nP_η

On a Possibility of Determining Nonuniformities in Al_xGa_1−xAs Solid Solution Compositions