Atomic diffusion in semiconductor epitaxial structures

Dzhafaröv, T. D.

doi:10.1002/pssa.2210420102

Cited by 23 publications

(29 citation statements)

References 92 publications

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“…If we relate the chromium solubility to the concentration of gallium vacancies, it would be naturally expected that this concentration in epitaxial material is found to be much lower than in bulk GaAs. A similar effect was observed in the case of diffusion of copper in epitaxial and bulk GaAs [9].…”

Section: Fabrication Treatment and Testing Of Materials And Structuressupporting

confidence: 77%

10.1007/s11453-008-2022-9

2010

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Section: Fabrication Treatment and Testing Of Materials And Structuressupporting

confidence: 77%

10.1007/s11453-008-2022-9

2010

CrossRef Listing of Deleted DOIs

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“…In this study, it is supposed that the conditions of impurity diffusion from a constant source into a semi-infinite solid are satisfied by the following equation [26]:…”

Section: Methodsmentioning

confidence: 99%

Calculation of the diffusion coefficient of Au in Bi-2223 superconductors

Öztürk¹,

Küçükömeroğlu²,

Terzioğlu³

2007

J. Phys.: Condens. Matter

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Undoped Bi-2223 samples were prepared using a conventional solid-state reaction method. Doping of Au in Bi-2223 was carried out by means of diffusion from an evaporated Au film on pellets. We have investigated the effect of Au diffusion and diffusion-annealing duration on the microstructure and superconducting properties of Au-doped samples by performing x-ray diffraction (XRD), scanning electron microscopy (SEM), dc resistivity and critical current density measurements. Gold diffusion in Bi1.8Pb0.35Sr1.9Ca2.1Cu3Oy has been studied over the temperature range 500–800 °C using the technique of successive removal of thin layers and the measurements of lattice parameters from XRD patterns at room temperature. The diffusion doping of Bi-2223 by Au causes a significant increase of the lattice parameter c by about 0.19%. This observation is used for calculation of the Au diffusion coefficient in Bi-2223. The Au diffusion coefficient decreases as the diffusion-annealing temperature decreases. The temperature dependence of the Au diffusion coefficient in the range 500–800 °C is described by the relation D = 4.4 × 10−4exp(−1.08 eV/kBT). Au doping of the sample increased the critical transition temperature and the critical current density from 100 ± 0.2 to 104 ± 0.2 K and from 40 to 125 A cm−2, in comparison with those of undoped samples. The critical transition temperature and critical current density of Au-doped samples increased with increasing diffusion-annealing time from 10 to 50 h. Au doping of the sample also improved the surface morphology and increased the high-Tc phase ratio. The possible reasons for the observed improvement in superconducting properties of the samples due to Au diffusion are discussed.

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“…A lot of works are dedicated to theoretical calculations and experimental evaluations of this value. [1][2][3][4][5][6][7][8][9][10] However the comparison of reference data reveals rather contradictory results on many systems. For instance, a significant discrepancy between theoretical and experimental data of activation energy was obtained even for such well-investigated process as silicon self-diffusion (3.2 eV and 4.76 eV, respectively).…”

Section: Introductionmentioning

confidence: 99%

“…For instance, a significant discrepancy between theoretical and experimental data of activation energy was obtained even for such well-investigated process as silicon self-diffusion (3.2 eV and 4.76 eV, respectively). [3][4][5] It is customary to distinguish between several types of main diffusion mechanisms in crystals viz., diffusion by internodes, vacancy mechanism, replacement mechanism, etc. The diffusion activation energy equals the value of the potential barrier that has to be overcome by the atom to take a new balanced position in the neighboring node or internode.…”

Section: Introductionmentioning

confidence: 99%

“…The comparison of calculation and experimental values, [1][2][3][4][5][6][7][8][9][10]18 of activation energy of diffusion (Table 2-5) shows that these values are in satisfactory accordance (in the limits of experiment accuracy). Temperature factor, that can also have values in diffusion processes, was indirectly considered in this approach via selecting the most valenceactive orbitals of the atom.…”

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confidence: 99%

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