Diffusion in Thermoelectric Materials

Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging

“…In the former case, the function ( )dt is proportional to t, wherein the rate of the recovery of copper from a supersaturated solid solution with consequent formation of local cumulations also increased in the presence of dislocations. Since in both cases the impurities or lattice structural defects are nuclei of decay of solid solutions [5], which corresponds to the instantaneous nucleation scenario, then, in accordance with Tables 1 and 2, in the first case there was growth of three-dimensional nuclei, and in the second one -two-dimensional nuclei, which was limited by the diffusion process.…”

“…It was noted that for small duration of thermal aging, it was proportional to t 0. 5 , and with time increase the values of φ b asymptotically approach to their minimum value.…”

“…(55) does not depend on x 0 , which is typical for the diffusion of the particles from the constant source to the semi-infinite space. Indeed, in the model of diffusion from the constant source into semi-infinite space, time motion of concentrations of particles approximately equal N 0 /2 has the form [4,5]:…”

“…We divide the numerator and denominator of the formula (5) by N 0 and multiply by x 0 and introduce the notations…”

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“…Let's divide the numerator and denominator of the formula (5) by N 0 and multiply by V 0 (V 0 is the volume of the reaction zone). We introduce the notations…”