Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging
Abstract:Abstract. It has been proposed to consider physical and chemical processes in materials of semiconductor products under external influences and thermal aging as flows of the random events. The mathematical analysis of random events in the physical and chemical processes has been presented. The theoretical results have been applied to the analysis of a number of processes.
Keywords
“…If the movement of defects is diffusive, in accordance with [14], [15,16]. The latter circumstance may indicate some generality of non-thermal mechanisms of interaction of submicrometer waves and weak magnetic fields with semiconductor structures.…”
Section: Probabilistic-physical Modeling Of the Evolution Of The Defementioning
confidence: 56%
“…To solve the first problem, we use the results of the work [14], which shows that the physical processes are caused by random events, and the corresponding random variables -the times before the events -obey the distribution Weibull-Gnedenko.…”
Section: Probabilistic-physical Modeling Of the Evolution Of The Defementioning
confidence: 99%
“…Being based on [14], we use Weibull-Gnedenko distribution as F 1 (t) and F 2 (t). Then, in a general case F 1 (t) and F 2 (t) can be expressed as follows [14]:…”
Section: Probabilistic-physical Modeling Of the Evolution Of The Defementioning
Abstract. Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
“…If the movement of defects is diffusive, in accordance with [14], [15,16]. The latter circumstance may indicate some generality of non-thermal mechanisms of interaction of submicrometer waves and weak magnetic fields with semiconductor structures.…”
Section: Probabilistic-physical Modeling Of the Evolution Of The Defementioning
confidence: 56%
“…To solve the first problem, we use the results of the work [14], which shows that the physical processes are caused by random events, and the corresponding random variables -the times before the events -obey the distribution Weibull-Gnedenko.…”
Section: Probabilistic-physical Modeling Of the Evolution Of The Defementioning
confidence: 99%
“…Being based on [14], we use Weibull-Gnedenko distribution as F 1 (t) and F 2 (t). Then, in a general case F 1 (t) and F 2 (t) can be expressed as follows [14]:…”
Section: Probabilistic-physical Modeling Of the Evolution Of The Defementioning
Abstract. Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
“…As it was noted in [1], the effects of electric, magnetic, electromagnetic and radiation fields on materials of semiconductor products lead to changes in states of ensembles of particles and defects. Behavior of these ensembles is caused by flow of random events in physical and chemical processes.…”
Section: Introductionmentioning
confidence: 89%
“…By analogy with [1], where the term of event intensity is used, we can write an expression for the sensitivity of events:…”
Section: Statistic Regularities Of Behavior Inherent To Materials Paramentioning
Abstract. It has been shown that the dependence between the parameters of materials of electronic equipment and external fields is determined by the distribution function of the corresponding random variable. The obtained results have been applied to the analysis of a number of physical phenomena.
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