Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Abstract

Abstract. Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.

Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field

“…Thus, one can expect that the mechanisms of defect structure transformation in epitaxial films treated in pulsed magnetic fields could be the same as those proposed at the non-thermal effect of wide range microwave electromagnetic irradiation [21]. Transformation of the defect subsystem under the action of microwave radiation is caused by a detachment and displacement of dislocations as well as destruction of the clusters of impurity-defect complexes with subsequent diffusion of destruction products.…”

“…We assume that motion of a defect from the subsurface region to the surface and migration of a defect to the subsurface region from the epitaxial layer adjacent to this subsurface region are random events. Then this physicalstatistical approach (as well as at microwave radiation treatment) allows us to obtain the following relation for the time dependence of the normalized intensity of integrated PL [8,14,21]: where I in is the initial value of the intensity of photoluminescence band, I 0proportionality factor, τ 1 , τ 2 are the time constants of random events, and m 1 and m 2form factors of the distribution function of time to a corresponding random event.…”