We demonstrate a programmable-erasable MIS capacitor with a single layer high-AlN dielectric on Si having a high capacitance density of 5 fF m 2 . It has low program and erase voltages of +4 and 4 V, respectively. Such an erase function is not available in other single layer Al 2 O 3 , AlON, or other known high-dielectric capacitors, where the threshold voltage ( th ) shifts continuously with voltage. This device exhibits good data retention with a th change of only 0.06 V after 10 000 s.
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