Low noise RF MOSFETs on flexible plastic substrates

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

“…However, low cost and large surface are of no advantage for certain application classes for which bandwidth above a few megahertz is relevant. To cope with this problem, the proper heterogeneous cointegration of macroelectronics subcircuits where performance is not required and leading-edge inorganic technologies based on ultrathin-film silicon or III-V semiconductors has recently emerged as a promising solution [1], [9]- [17]. Along this philosophy, several strategies developed to achieve higher electrical performance are quantitatively compared in Fig.…”

“…This strategy presents the distinctive advantage to directly give access to the hundreds of gigahertz range [1] at the reasonable extra cost needed to thin and transfer bond on flexible substrate dies originating from, e.g., state-of-the-art CMOS technologies. Based on this approach, 100-GHz RF transistors originating from 0.13 to 0.18 µm CMOS bulk technologies have been reported after thinning to 40 or 30 µm as reported in [1] and [17], respectively. The work reported here highlights state-of-the-art RF performance for n-and p-MOSFETs transfer bonded onto a 0741-3106/$26.00 © 2011 IEEE plastic substrate, starting from a partially depleted siliconon-insulator (SOI)-CMOS 65-nm technology.…”

Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor

“…The intrinsic device characteristics were obtained by a de-embedding procedure. [5][6][7][8][9] The RF power characterization was carried out by on-wafer measurements at 2.4 GHz using an ATN load-pull system, where the input and output impedance matching conditions were selected to optimize the output power. Figure 1 shows a comparison of DC drain breakdown voltage at a gate voltage (V g ) of 0 V (BV dss ) for conventional and asymmetric-LDD MOS transistors.…”

“…[1][2][3][4][5][6][7][8][9] This has led MOSFETs to be the prime choice for wireless communication and RF system-on-chip (SoC) application such as WiMAX, W-LAN, and ultrawide band (UWB). However, one fundamental challenge for MOS transistors is the relatively poor RF power performance, which is due to the lower drain breakdown voltage for RF power delivery.…”

On the bending characterization of flexible radio-frequency single-crystalline germanium diodes on a plastic substrate

“…7-16 Different from electronic devices on rigid substrates, flexible electronics are required to operate under mechanical deformation conditions; therefore, in addition to the performance enhancement, characterizations of high-performance flexible electronics under bending conditions have been conducted, indicating different performance variations. 11,14,17,18 In particular, the fabricated flexible single-crystalline Ge devices have demonstrated high frequency response and performance improvements compared to their counterpart of the Si devices. 15 However, how the mechanical bending affects the performance of Ge flexible rf devices is still unclear.…”