Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure was found to be the deciding growth parameter.
The electrical properties (Hall, PL, DLTS data) of undoped hydride VPE GaAs layers are presented. The properties of deep electron traps in this material are discussed. The variation of the layer properties in dependence on a variation of the gas phase Ga/As ratio is compared for two series of experiments. Only in one series characterized by GaCl partial pressure variation an optimum in electrical properties, depending on actual growth conditions, is found. The crucial parameter for the determination of such optimum growth conditions is the GaCl partial pressure.
The electrical properties (Hall, PL, DLTS data) are presented of undoped GaAs VPE layers, grown in the hydride system. The variation of these properties in dependence on a variation of the GaCl partial pressure in the VPE growth regime is investigated. An optimum in electrical proper‐ties, depending on actual growth conditions, is found. This optimum cannot be related to a fixed Ga/As ratio.
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