On the Correlations between Electrical Properties and Growth Conditions for VPE GaAs Grown in the Hydride System

Abstract

The electrical properties (Hall, PL, DLTS data) are presented of undoped GaAs VPE layers, grown in the hydride system. The variation of these properties in dependence on a variation of the GaCl partial pressure in the VPE growth regime is investigated. An optimum in electrical proper‐ties, depending on actual growth conditions, is found. This optimum cannot be related to a fixed Ga/As ratio.