An experimental study on deep level incorporation and background doping in hydride VPE GaAs

Diegner, B.; Weinert, H.; Pickenhain, R.; Hörig, W.

doi:10.1002/pssa.2210970131

Cited by 7 publications

(1 citation statement)

References 23 publications

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“…The value of the activation energy of 0.476 eV trap was in good agreement with ΔΕ proposed for Νi2 +/1+ double acceptor in GaAs (ΔΕ = 0.48 eV [6,7]). Moreover, the nickel contamination is usually observed in hydride VPE materials [8,9]. Both of these facts strongly support attribution of the 0.476 eV trap to the Ni 2 +/ 1 + double acceptor level.…”

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confidence: 63%

The Pressure Dependence of Transition Metal-Related Levels in GaAs

1991

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The hydrostatic pressure coefficients of V3+/2+ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Νi2 +/ 1 + double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni 2 +/ 1 + level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.PACS numbers: 71.55. Eq, 62.50.+p It is known that transition metal (TM) levels in compound semiconductors can act as reference levels, from which heterojunction band lineups can be calculated [1,2]. Adopting the concept of such reference level, it was proposed that TM levels absolute energies (i.e. vacuum related) should be insensitive to stress [3]. Thus, the pressure coefficients of TM levels related to conduction band or valence band edge could be used to calculate the band-edge deformation potential [3]. However, it was found from the uniaxial-stress DLTS measurements that the hydrostatic pressure coefficient (relative to the bottom of the conduction band) for N 2 +/ 1 + level in GaAs was 34% larger than for the T3+/2+ and V 3 +/ 2 + levels in the same material [4]. Therefore, the aim of this work was to measure the hydrostatic pressure coefficients of V3+12+ level and of the 0.476 eV trap (usually related to Νi2+/ 1 + level). These coefficients were measured in the DLTS experiment performed under hydrostatic pressure.The samples investigated in this work were prepared from two materials: vanadium doped HB GaAs (n = 3 x 10 15 cm-3) grown at MIT (USA) and undoped VPE GaAs (n = 2.5 x 10 15 cm -3 ) grown in ITME, Warsaw. The DLTS measurements were performed on Au-Schottky diodes placed in a high pressure cell with a benzine as a pressure transmitting medium. Hydrostatic pressure up *This work was supported by CPBP 01.05.(323)

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confidence: 63%

The Pressure Dependence of Transition Metal-Related Levels in GaAs

1991

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Photoluminescence study on the influence of substrate doping on the properties of nominally undoped VPE-GaAs

Weinert

Diegner

Kugler

1986

phys. stat. sol. (a)

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Effect of proton bombardment on GaAs luminescence

Glinchuk

Zayats

Prokhorovich

1989

Phys. Stat. Sol. (a)

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The effect of 6.6 MeV proton bombardment and subsequent annealing on the luminescence of Zn, Te‐doped p‐type GaAs crystals is studied and analysed. It is shown that: a) the proton bombardment leads to an appearance of the extrinsic emission band peaked at hvm ≈ 1.26 eV and to a marked decrease in the intensity of the near intrinsic (peaked at hvm ≈ 1.5 eV) emission band; b) subsequent annealing of proton‐bombarded crystals leads, firstly, to a disappearance of the 1.26 eV emission band, and, secondly, to the appearance and then to the disappearance of the extrinsic emission bands peaked at hvm near 1.39 and 1.18 eV, and also to a restoration of the original intensity of the near intrinsic emission band. The above pointed variations in the GaAs luminescence spectra show the effective formation of AsiZnGa, VAsZnGa, and VGaTeAs pairs (besides isolated gallium and arsenic vacancies) with relatively low thermal stability in proton‐irradiated unannealed (annealed) p‐type GaAs crystals.

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An experimental study on deep level incorporation and background doping in hydride VPE GaAs

Cited by 7 publications

References 23 publications

The Pressure Dependence of Transition Metal-Related Levels in GaAs

The Pressure Dependence of Transition Metal-Related Levels in GaAs

Photoluminescence study on the influence of substrate doping on the properties of nominally undoped VPE-GaAs

Effect of proton bombardment on GaAs luminescence

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