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Physical fundamentals are analyzed for the method of determination of Cd 1-x Zn x Te composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.

The effect of 2.2 MeV electron irradiation and subsequent annealings on the luminescence of tellurium-compensated p-type GaAs crystals is studied and analyzed. AeGembI He TomKO B MbmbmoBot, HO M rammeBoit nonperneTKe apceHaAa r a n m a ; qecme xapamepncTmni C O~A~H H~I X PTB 1,20 eV ~a n y s a~~u~x UeHTpoB (nap

Little is known about the "low energy" emission ( h ? < E -E ) from p-GaAs.c v In the present work we report about the trlow energy" bands at hS = 0.93 and 1.02 eV in p-GaAs and compare them with similar bands in n-GaAs.

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