The 0.93 and 1.02 eV luminescence in p-GaAs

Vorobkalo, F. M.; Glinchuk, K. D.; Prokhorovich, A. V.

doi:10.1002/pssa.19700010330

Cited by 9 publications

(9 citation statements)

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“…A number of low energy emission bands arising from radiative recombination of carriers a t deep energy levels are observed in the photoluminescence spectrum of GaAs [l]. Previously the characteristics of the low energy emission bands a t 0.93 and 1.02 eV were investigated in p-GaAs [2]. I n the present paper we describe the characteristics of the low energy emission bands a t 0.93, 0.95 t o 0.97, and 0.97 to 1.0 eV in n-GaAs.…”

Section: Introductionmentioning

confidence: 99%

The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAs

Vorobkalo

Glinchuk

Prokhorovich

1971

Phys. Stat. Sol. (a)

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Investigations of the low energy emission bands a t 0.93 to 1.0 eV in Te-doped n-type GaAs were made. An analysis is given of the dependences of steady state photolumineseence intensity and the kinetics of the photoluminescence decay on temperature and exciting light intensity and this leads to a scheme of electron transitions via radiative centres with the following parameter values: energy position ( E , + 0.5 eV), concentration ( N = 1015 to 10l6 ~m -~) , electron and hole capture coefficients (y,, = 5 x cm3 s-l, yp = 2 : < x HponeReHo m y q e~~e I I H~K O~H~~~~T~. I Y~C K M X ~O J I O C ~a n y s e~~n 0,93 go I ,O 3B om3 s-l a t T = 77 to 400 O K ) . I3 n-GaAs, JIerMpOBaHHOM Te. A~anrna 3aBHCEiMOCTefi HHTeHCHBHOCTH CTaUMOHap-H O f i @OTOJIIoMHHeCL[eHUHkI H HHHeTHIEM 3aTyXaHMH @OTOJIIOMI~HeCUeHUHH OT T6M-nepaTypbI H YPOBHH ~036ymge~mn ~O~B O~I H J I onpenenmb cxeniy ~J I~K T P O H I I~I X rIepexoaoB vepea 113nysalou~e UeHTpbI II IIX xapaIwepncTmai : a~e p r e~~s e c~o e IIOaOmeHHe ( E , + 0,5 3 R ) , KOHIJeHTpaUHIO ( x = loi5 a0 10" CM-3), K03@$HUHeHTbI 3aXBaTa 3JIeKTpOHOB H EbIPOK (Yn = 5 X CM3 Ce1E-I npH T = 77 AO 400 O H ) . CM3 CeH-' , yp = 2 X

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Section: Introductionmentioning

confidence: 99%

The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAs

Vorobkalo

Glinchuk

Prokhorovich

1971

Phys. Stat. Sol. (a)

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“…Nc:,(x) profiles were found studying the change as a function of x in the concentrations of copper-induced complexes. The Ncu(z) profiles thus obtained differ from the true one at x-values where the isolated copper atom concentration exceeds considerably the concentration of copper-induced complexesa false plateau value of NcU(x) is observed in this region (for details see [3]). Copper diffusion and subsequent removal of copper atoms practically did not influence the electron concentrations no, 6n, the excess free hole concentration 6p, and the diffusion length of excess carriers 1,; this is confirmed by the absence of copper-induced changes in the 1.51 eV intrinsic emission intensity, see below.…”

Section: Methodsmentioning

confidence: 85%

“…The data presented in this figure were used to obtain the 1 1 . 3 and I1. 35 profiles presented in Pig.…”

Section: Resultsmentioning

confidence: 99%

“…To separate the individual Gaussaian shaped 1.35 and 1.30 eV emission bands at any x a comparative analysis of the total peak intensities I * ( z ) and I ( x ) = I 1 . 3 (~, hvz) + 11.35(z, hv:) and 81*(z)/a(hv,Y) = 0 were used (for details see [3]). These permitted to find correlations between 11,3/I* and 11.35/I* at any intermediate h v t values, i.e.…”

Section: Resultsmentioning

confidence: 99%

“…Yrofiles of 77 K peak emission intensities 11.3 ( l ) , 11.35 (Z), 11.51(3) and 01 concentrations of radiative centres N1.3 (4). N1.35(5), copper atoms Ncu(6) for copper-diffused n-type GaAs a t 800 "C for 10 min (120 = 2 x 1OI8 ~m -~) .…”

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A new (non-copper-induced) 1.35 eV emission band in n-type GaAs. Origin and characteristics

Glinchuk

Prokhorovich

Zayats

1984

Phys. Stat. Sol. (a)

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A new (non‐copper induced) emission band peaked at hνm(77 K) = 1.35 eV is observed in n‐type GaAs. Pronounced features of this emission are: it disappears as copper atoms are introduced into GaAs and appears again as the copper atoms are afterwards removed from the GaAs interior. Evidence is presented that the free electron transitions to acceptor‐type (VGaTeAs) VAScomplexes are responsible for the non‐trivial emission observed. Temperature and doping variations of the peak positions, intensities, and half‐widths of the new 1.35 eV emission band are presented. An analysis of these results shows that the energy levels of the (VGaTeAs) VAS complexes are localized not far (ε = 0.1 eV) from the top of the valence band; these complexes readily capture both, free electrons (capture coefficient cn = 10−11cm3/s) and holes (capture coefficient cn= 10−8cm3/s); rather strong electron‐phonon coupling exists in (VGaTeAs) VAScomplexes – phonons are effectively emitted during the free electron radiative recombination.

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