Effect of heat treatment on the 0.93 eV luminescence band in p-GaAs

Vorobkalo, F. M.; Glinchuk, K. D.; Prokhorovich, A. V.

doi:10.1002/pssa.2210100234

Phys. Stat. Sol. (a)

1972

DOI: 10.1002/pssa.2210100234

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Effect of heat treatment on the 0.93 eV luminescence band in p-GaAs

F. M. Vorobkalo¹,

K. D. Glinchuk²,

A. V. Prokhorovich³

Abstract: It is shown that the intensity of the 0.93eV emission band (the concentration of the 0.93 eV radiative centres) in p‐GaAs can be increased and subsequently decreased by annealing. Evidence is presented that the centre giving rise to the 0.93 eV emission, may be associated with interstitial copper atoms and arsenic vacancies.

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1975

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Cited by 3 publications

References 18 publications

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Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Vorobkalo¹,

Glinchuk²,

Prokhorovich³

et al. 1973

Phys. Stat. Sol. (a)

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Heat treatment of n‐GaAs leads to a disappearance near its surface of the 0.93 eV emission band and to an appearance of the 1.0 and 1.28 eV emission bands. In the GaAs interior the 1.0 eV emission band gradually shifts to lower energies (0.93 eV), only weakly changing its intensity, the intensity of the 1.28 eV emission band monotonically decreases. The shift of the 1.0 eV emission band is the result of a superposition of the 1.0 and 0.93 eV emission bands with different intensities: the 1.0 eV emission band is at maximum and the 0.93 eV emission band at minimum near GaAs surface, and the 1.0 eV emission band is at minimum and the 0.93 eV emission band at maximum in the GaAs interior. Evidence is presented that in n‐GaAs the 0.93 eV radiative centres may be associated with the VGaVAs divacancy, and the 1.0 eV radiative centres, with substitutional copper atom–vacancy pairs (CuGaVAs). The 1.0 eV radiative centres are formed by filling a VGaVAs divacancy (the 0.93 eV radiative centre) by diffusing copper atoms; this explains the 1:1 correspondence between changes in the intensities of the 1.0 and 0.93 eV emission bands.

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Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Vorobkalo¹,

Glinchuk²,

Prokhorovich³

et al. 1973

Phys. Stat. Sol. (a)

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Temperature quenching of the copper-induced 1.35 eV emission band in p-GaAs

Glinchuk

Prokhorovich

1974

Phys. Stat. Sol. (a)

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The copper‐induced 1.35 eV emission band in p‐GaAs with predominantly neutral copper atoms exhibits a marked decrease of intensity as the temperature is increased. These results cannot be satisfactorily explained by the previous model for the 1.35 eV emission band as arising from the free electron radiative transitions to neutral copper atoms. To explain consistently the observed results a new scheme of radiative transitions for the copper‐induced 1.35 eV emission band (it includes electron transitions from shallow donors to acceptors located below the neutral copper atom levels) is proposed.

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Radiative recombination involving deep centers in compensated GaAs

Peka¹,

Gorshkov²,

Spektor³

et al. 1975

J Appl Spectrosc

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Effect of heat treatment on the 0.93 eV luminescence band in p-GaAs

Cited by 3 publications

References 18 publications

Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Temperature quenching of the copper-induced 1.35 eV emission band in p-GaAs

Radiative recombination involving deep centers in compensated GaAs

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