We are developing small-pixel transition-edge-sensor (TES) for solar physics and astrophysics applications. These large format close-packed arrays are fabricated on solid silicon substrates and are designed to accommodate count-rates of up to a few hundred counts/pixel/second at a FWHM energy resolution -2 eV at 6 keV. We have fabricated versions that utilize narrow-line planar and stripline wiring. We present measurements of the performance and uniformity of kilo-pixel arrays, incorporating TESs I1Hh single 65-micron absorbers on a 7s-micron pitch, as wen as versions with more than one absorber attached to the TES, 4-absorber and 9-absorber "Hydras". We have also fabricated a version of this detector optimized for lower energies and lower count-rate applications. These devices have a lower superconducting transition temperature and are operated just above the 40mK heat sink temperature. This results in a lower heat capacity and low thermal conductance to the heat sink. With individual single pixels of this type we have achieved a FWHM energy resolution of 0.9 eV with 1.5 keV Al K x-rays, to our knowledge the first x-ray microcalorimeter with sub-eV energy resolution. The 4-absorber and 9-absorber versions of this type achieved FWHM energy resolutions of 1.4 eV and 2.1 eV at 1.5 keV respectively. We will discuss the application of the se devices for new astrophysics mission concepts.https://ntrs.nasa.gov/search.jsp?R=20120011612 2018-05-12T07:47:57+00:00Z
Micro Electromechanical System (MEMS) microshutter arrays are being developed at NASA Goddard Space Flight Center for use as a field selector of the Near Infrared Spectrograph (NIRSpec) on the James Webb Space Telescope (JWST). The microshutter arrays are designed for the spontaneous selection of a large number of objects in the sky and the transmission of light to the NIRSpec detector with high contrast. The JWST environment requires cryogenic operation at 35K. Microshutter arrays are fabricated out of silicon-on-insulator (SOI) silicon wafers. Arrays are closepacked silicon nitride membranes with a pixel size of 100x200 m. Individual shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with a minimized mechanical stress concentration. Light shields are processed for blocking light from gaps between shutters and frames. The mechanical shutter arrays are fabricated using MEMS technologies. The processing includes multi-layer metal depositions, the patterning of magnetic stripes and shutter electrodes, a reactive ion etching (RIE) to form shutters out of the nitride membrane, an anisotropic back-etch for wafer thinning, followed by a deep RIE (DRIE) back-etch to form mechanical supporting grids and release shutters from the silicon substrate. An additional metal deposition is used to form back electrodes. Shutters are actuated by a magnetic force and latched using an electrostatic force. Optical tests, addressing tests, and life tests are conducted to evaluate the performance and the reliability of microshutter arrays.
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