Compact electro-optical modulators are demonstrated on thin films of lithium niobate on silicon operating up to 50 GHz. The half-wave voltage length product of the high-performance devices is 3.1 V.cm at DC and less than 6.5 V.cm up to 50 GHz. The 3 dB electrical bandwidth is 33 GHz, with an 18 dB extinction ratio. The third-order intermodulation distortion spurious free dynamic range is 97.3  dBHz^2/3 at 1 GHz and 92.6  dBHz^2/3 at 10 GHz. The performance demonstrated by the thin-film modulators is on par with conventional lithium niobate modulators but with lower drive voltages, smaller device footprints, and potential compatibility for integration with large-scale silicon photonics.

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Thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge(23)Sb(7)S(70), to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10(5) quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.

Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 µm 2 . The compactness of the waveguides results in efficient second-order nonlinear devices. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications. References and Links

The ability to spectrally translate lightwave signals in a compact, low-power platform is at the heart of the promise of nonlinear nanophotonic technologies. For example, a device to link the telecommunications band with visible and short near-infrared wavelengths can enable a connection between high-performance chipintegrated lasers based on scalable nanofabrication technology with atomic systems used for time and frequency metrology. While second-order nonlinear (χ (2) ) systems are the natural approach for bridging such large spectral gaps, here we show that third-order nonlinear (χ (3) ) systems, despite their typically much weaker nonlinear response, can realize spectral translation with unprecedented performance. By combining resonant enhancement with nanophotonic mode engineering in a silicon nitride microring resonator, we demonstrate efficient spectral translation of a continuous-wave signal from the telecom band (≈ 1550 nm) to the visible band (≈ 650 nm) through cavity-enhanced four-wave mixing. We achieve such translation over a wide spectral range >250 THz with a translation efficiency of (30.1 ± 2.8) % and using an ultra-low pump power of (329 ± 13) µW. The translation efficiency projects to (274 ± 28) % at 1 mW and is more than an order of magnitude larger than what has been achieved in current nanophotonic devices.

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The on-chip creation of coherent light at visible wavelengths is crucial to field-level deployment of spectroscopy and metrology systems. Although on-chip lasers have been implemented in specific cases, a general solution that is not restricted by limitations of specific gain media has not been reported. Here, we propose creating visible light from an infrared pump by widely-separated optical parametric oscillation (OPO) using silicon nanophotonics. The OPO creates signal and idler light in the 700 nm and 1300 nm bands, respectively, with a 900 nm pump. It operates at a threshold power of (0.9 ± 0.1) mW, over 50× smaller than other widely-separated microcavity OPO works, which have only been reported in the infrared. This low threshold enables direct pumping without need of an intermediate optical amplifier. We further show how the device design can be modified to generate 780 nm and 1500 nm light with a similar power efficiency. Our nanophotonic OPO shows distinct advantages in power efficiency, operation stability, and device scalability, and is a major advance towards flexible on-chip generation of coherent visible light. arXiv:1909.07248v1 [physics.optics]