The large losses of plasmonic nanocavities, orders of magnitude beyond those of photonic dielectric cavities, places them, perhaps surprisingly, as exceptional enhancers of single emitter light-matter interactions. The ultra-confined, sub-diffraction limited, mode volumes of plasmonic systems offer huge coupling strengths (in the 1-100 meV range) to single quantum emitters. Such strengths far outshine the lower coupling strengths of dielectric microcavities, which nonetheless easily achieve single emitter 'strong coupling' due to the low loss rates of dielectric cavities. In fact, it is the much higher loss rate of plasmonic cavities that make them desirable for applications requiring bright, fastemitting photon sources. Here we provide a simple method to reformulate lifetime measurements of single emitters in terms of coupling strengths to allow a useful comparison of the literature of plasmonic cavities with that of cavity-QED, typically more closely associated with dielectric cavities. Using this approach, we observe that the theoretical limit of coupling strength in plasmonic structures has almost been experimentally achieved with even single molecule strong coupling now observed in plasmonic systems. However, key problems remain to maximise the potential of plasmonic cavities, including precise and deterministic nanopositioning of the emitter in the nanosized plasmonic mode volumes, understanding the best geometry for the plasmonic cavity, separating useful photons from background photons and dealing with the fluorescence quenching problems of metals. Here we attempt to raise awareness of the benefits of plasmonic nanocavities for cavity-QED and tackle some of the potential pitfalls. We observe that there is increasing evidence, that using correct geometries, and improving emitter placement abilities, significant quenching can be avoided and photon output maximised towards the extraordinary limit provided by the high radiative rates of plasmonic nanocavities.

Photon pair sources are fundamental building blocks for quantum entanglement and quantum communication. Recent studies in silicon photonics have documented promising characteristics for photon pair sources within the telecommunications band, including sub-milliwatt optical pump power, high spectral brightness, and high photon purity. However, most quantum systems suitable for local operations, such as storage and computation, support optical transitions in the visible or short near-infrared bands. In comparison to telecommunications wavelengths, the significantly higher optical attenuation in silica at such wavelengths limits the length scale over which optical-fiber-based quantum communication between such local nodes can take place. One approach to connect such systems over fiber is through a photon pair source that can bridge the visible and telecom bands, but an appropriate source, which should produce narrow-band photon pairs with a high signal-to-noise ratio, has not yet been developed. Here, we demonstrate an on-chip visible-telecom photon pair source for the first time, using high quality factor silicon nitride microresonators to generate bright photon pairs with an unprecedented coincidence-to-accidental ratio (CAR) up to (3.8 ± 0.2) × 103. We further demonstrate dispersion engineering of the microresonators to enable the connection of different species of trapped atoms/ions, defect centers, and quantum dots to the telecommunications bands for future quantum communication systems.

The ability to spectrally translate lightwave signals in a compact, low-power platform is at the heart of the promise of nonlinear nanophotonic technologies. For example, a device to link the telecommunications band with visible and short near-infrared wavelengths can enable a connection between high-performance chipintegrated lasers based on scalable nanofabrication technology with atomic systems used for time and frequency metrology. While second-order nonlinear (χ (2) ) systems are the natural approach for bridging such large spectral gaps, here we show that third-order nonlinear (χ (3) ) systems, despite their typically much weaker nonlinear response, can realize spectral translation with unprecedented performance. By combining resonant enhancement with nanophotonic mode engineering in a silicon nitride microring resonator, we demonstrate efficient spectral translation of a continuous-wave signal from the telecom band (≈ 1550 nm) to the visible band (≈ 650 nm) through cavity-enhanced four-wave mixing. We achieve such translation over a wide spectral range >250 THz with a translation efficiency of (30.1 ± 2.8) % and using an ultra-low pump power of (329 ± 13) µW. The translation efficiency projects to (274 ± 28) % at 1 mW and is more than an order of magnitude larger than what has been achieved in current nanophotonic devices.

The on-chip creation of coherent light at visible wavelengths is crucial to field-level deployment of spectroscopy and metrology systems. Although on-chip lasers have been implemented in specific cases, a general solution that is not restricted by limitations of specific gain media has not been reported. Here, we propose creating visible light from an infrared pump by widely-separated optical parametric oscillation (OPO) using silicon nanophotonics. The OPO creates signal and idler light in the 700 nm and 1300 nm bands, respectively, with a 900 nm pump. It operates at a threshold power of (0.9 ± 0.1) mW, over 50× smaller than other widely-separated microcavity OPO works, which have only been reported in the infrared. This low threshold enables direct pumping without need of an intermediate optical amplifier. We further show how the device design can be modified to generate 780 nm and 1500 nm light with a similar power efficiency. Our nanophotonic OPO shows distinct advantages in power efficiency, operation stability, and device scalability, and is a major advance towards flexible on-chip generation of coherent visible light. arXiv:1909.07248v1 [physics.optics]

Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈ 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function g (2) (τ ) for the frequency-converted light is antibunched with g (2) (0) = 0.290 ± 0.030, compared to the before-conversion value g (2) (0) = 0.080 ± 0.003. We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

Cavity quantum electrodynamics is the art of enhancing light-matter interaction of photon emitters in cavities with opportunities for sensing, quantum information, and energy capture technologies. To boost emitter-cavity interaction, that is, coupling strength g, ultrahigh quality cavities have been concocted yielding photon trapping times of microsecondsy to milliseconds. However, such high- Q cavities give poor photon output, hindering applications. To preserve high photon output, it is advantageous to strive for highly localized electric fields in radiatively lossy cavities. Nanophotonic antennas are ideal candidates combining low- Q factors with deeply localized mode volumes, allowing large g, provided the emitter is positioned exactly right inside the nanoscale mode volume. Here, with nanometer resolution, we map and tune the coupling strength between a dipole nanoantenna-cavity and a single molecule, obtaining a coupling rate of g ∼ 200 GHz. Together with accelerated single photon output, this provides ideal conditions for fast and pure nonclassical single photon emission with brightness exceeding 10 photons/sec. Clearly, nanoantennas acting as "bad" cavities offer an optimal regime for strong coupling g to deliver bright on-demand and ultrafast single photon nanosources for quantum technologies.

Optical nanoantennas confine light on the nanoscale, enabling strong light-matter interactions and ultracompact optical devices. Such confined nanovolumes of light have nonzero field components in all directions (x, y, and z). Unfortunately mapping of the actual nanoscale field vectors has so far remained elusive, though antenna hotspots have been explored by several techniques. In this paper, we present a novel method to probe all three components of the local antenna field. To this end a resonant nanoantenna is fabricated at the vertex of a scanning tip. Next, the nanoantenna is deterministically scanned in close proximity to single fluorescent molecules, whose fixed excitation dipole moment reads out the local field vector. With nanometer molecular resolution, we distinctly map x-, y-, and z-field components of the dipole antenna, i.e. a full vectorial mode map, and show good agreement with full 3D FDTD simulations. Moreover, the fluorescence polarization maps the localized coupling, with emission through the longitudinal antenna mode. Finally, the resonant antenna probe is used for single molecule imaging with 40 nm fwhm response function. The total fluorescence enhancement is 7.6 times, while out-of-plane molecules, almost undetectable in far-field, are made visible by the strong antenna z-field with a fluorescence enhancement up to 100 times. Interestingly, the apparent position of molecules shifts up to 20 nm depending on their orientation. The capability to resolve orientational information on the single molecule level makes the scanning resonant antenna an ideal tool for extreme resolution bioimaging.

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si 3 N 4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si 3 N 4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip. * marcelo.davanco@nist.gov