2019
DOI: 10.1038/s41566-019-0464-9
|View full text |Cite
|
Sign up to set email alerts
|

Efficient telecom-to-visible spectral translation through ultralow power nonlinear nanophotonics

Abstract: The ability to spectrally translate lightwave signals in a compact, low-power platform is at the heart of the promise of nonlinear nanophotonic technologies. For example, a device to link the telecommunications band with visible and short near-infrared wavelengths can enable a connection between high-performance chipintegrated lasers based on scalable nanofabrication technology with atomic systems used for time and frequency metrology. While second-order nonlinear (χ (2) ) systems are the natural approach for … Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
65
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
7
2

Relationship

2
7

Authors

Journals

citations
Cited by 116 publications
(70 citation statements)
references
References 43 publications
0
65
0
Order By: Relevance
“…As a result, such ultra-high-Q resonators can suffer from significant waveguide geometry variation, which is problematic in many applications that rely upon accurate control of dimensions. For example, the detection of carrier envelope offset frequency of microcombs for self-referencing or the efficient spectral translation between visible and infrared light require precise dimensional control of the waveguide cross section[37]. Compared to dielectrics, the epitaxial growth for semiconductors enables atomic scale accuracy of material thickness with high uniformity, providing a good solution to dimension control in nonlinear photonics.One commonly used step in the fabrication of high Q resonators, but not critical in AlGaAsOI process, is a high temperature (>1000 ᵒ C) anneal, which reduces the O-H and N-H bonds in deposited Si3N4 and SiO2 layers, as such bonds cause absorption losses.However, this step is not compatible with the fabrication of standard photonic pg 15.…”
mentioning
confidence: 99%
“…As a result, such ultra-high-Q resonators can suffer from significant waveguide geometry variation, which is problematic in many applications that rely upon accurate control of dimensions. For example, the detection of carrier envelope offset frequency of microcombs for self-referencing or the efficient spectral translation between visible and infrared light require precise dimensional control of the waveguide cross section[37]. Compared to dielectrics, the epitaxial growth for semiconductors enables atomic scale accuracy of material thickness with high uniformity, providing a good solution to dimension control in nonlinear photonics.One commonly used step in the fabrication of high Q resonators, but not critical in AlGaAsOI process, is a high temperature (>1000 ᵒ C) anneal, which reduces the O-H and N-H bonds in deposited Si3N4 and SiO2 layers, as such bonds cause absorption losses.However, this step is not compatible with the fabrication of standard photonic pg 15.…”
mentioning
confidence: 99%
“…over the entire volume. 3 This property has already been employed to successfully explore second [4][5][6][7][8] and third [9][10][11] harmonic generation as well as frequency mixing 12,13 with dielectric nanoparticles, exceeding the achieved efficiencies of comparable plasmonic systems. Furthermore, the lack of linear absorption reduces photon-electron interactions and thus promotes all-dielectric structures as a platform for non-destructive all-optical switching, sensing and data processing, [14][15][16][17][18][19] in particular at high powers above the damage threshold of plasmonic metals.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, such ultra-high-Q resonators can suffer from significant waveguide geometry variation, which is problematic in many applications that rely upon accurate control of dimensions. For example, the detection of carrier envelope offset frequency of microcombs for self-referencing or the efficient spectral translation between visible and infrared light require precise 50 2.05 6.2 × 10 −19 ∼1.5 3.2 × 10 6 10 (500 GHz) Hydex 51 1.7 1.15 × 10 −19 ∼2 1 × 1 0 6 50 (200 GHz) Si 52 3.47 5 × 10 −18 ∼2 5.9 × 10 5 3.1 (127 GHz) GaP 53 3 dimensional control of the waveguide cross section 41 . Compared with dielectrics, the epitaxial growth for semiconductors enables atomic scale smooth surfaces (see Supplementary Fig.…”
Section: Discussionmentioning
confidence: 99%
“…Since AlGaAsOI supports both of the most efficient second-and thirdorder nonlinear effects in integrated photonics, it holds the potential to simultaneously incorporate self-referencing using SHG together with octave-spanning Kerr comb generation. It should also be noted that in quantum optics, efficient χ (2) and χ (3) processes are important for several processes, e.g., the spontaneous parametric down-conversion 46 and spontaneous four wave mixing 41 . Moreover, other nonlinear properties of AlGaAs, such as the photoelastic and piezoelectric effects 47 , can be harnessed by utilizing the high-Q cavity in optomechanics.…”
Section: Discussionmentioning
confidence: 99%