In this paper we have found that if a Kenmotsu manifold with a Killing vector field satisfies gradient Ricci soliton equation then the smooth function is either constant or is orthogonal to the Killing vector field.

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Electrical and structural characteristics of the nitrogen reaction at SiO2-Si interfaces

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The object of the present paper is to study some properties of Kenmotsu manifold whose metric is conformal $\eta$-Einstein soliton. We have studied certain properties of Kenmotsu manifold admitting conformal $\eta$-Einstein soliton. We have also constructed a 3-dimensional Kenmotsu manifold satisfying conformal $\eta$-Einstein soliton.

In this paper, we study ∗-Conformal [Formula: see text]-Ricci soliton on Sasakian manifolds. Here, we discuss some curvature properties on Sasakian manifold admitting ∗-Conformal [Formula: see text]-Ricci soliton. We obtain some significant results on ∗-Conformal [Formula: see text]-Ricci soliton in Sasakian manifolds satisfying [Formula: see text], [Formula: see text], [Formula: see text] [Formula: see text], where [Formula: see text] is Pseudo-projective curvature tensor. The conditions for ∗-Conformal [Formula: see text]-Ricci soliton on [Formula: see text]-conharmonically flat and [Formula: see text]-projectively flat Sasakian manifolds have been obtained in this paper. Lastly we give an example of five-dimensional Sasakian manifolds satisfying ∗-Conformal [Formula: see text]-Ricci soliton.

We have developed a technique for growth of thin oxides (80–90Å) with an intermediate annealing step. The oxides exhibit a tight distribution in breakdown voltage measurements leading to defect density less than 5/cm2, intrinsic breakdown field of 12 MV/cm, and a value of less than 1×1010/cm2‐normaleV for interface trap density in midgap. The inferior electrical properties of thin oxides grown by conventional methods in dry oxygen with Ar dilution have been correlated with normalSi‐SiO2 interface roughness using high resolution transmission electron microscopy. The intermediate annealing process may be used to improve the endurance and retention properties of EEPROM devices and alleviate the degradation of thin oxides in short‐channel MOS devices.

The energy and spatial distribution of intrinsic hole traps in dry thermal silicon dioxide have been determined. Thermal detrapping was used for the determination of energy levels of the traps and the etch-back technique was used to find the spatial location of the traps. These traps are distributed in energy from 1.0 to 1.5 eV with respect to the valence band edge of the silicon dioxide. Their centroid is located at approximately 120 Å from the Si–SiO2 interface. Results of various postoxidation annealing treatments show that the density of traps is significantly dependent on the process conditions. Like fixed charge Qf, these traps seem to be related to the lattice imperfections in SiO2 near the interface; however, the hole trap density and Qf vary in opposite directions due to the process changes. N2 annealing increases the trap density and O2 annealing, which reduces the hole trap density, increases the electron trap density in SiO2. Based on these results we support the trivalent silicon model for the traps and we postulate that nonbridging oxygen acts as an electron trap in SiO2. These results also support Raider and Berman’s model for fixed charge Qf.