Si/SiO2 interface roughness: Structural observations and electrical consequences

Carim, A. H.; Bhattacharyya, Arindam

doi:10.1063/1.95870

Cited by 79 publications

(20 citation statements)

References 18 publications

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“…1,2 Since the natural oxide layer formed on Si surface is likely to have a close relation to microroughness, passivation methods of Si surface from natural oxidation have been widely investigated, 3,4 and H termination of Si surface by HF treatment has been clarified to be effective. However, it is pointed out that a few F species also exist on a Si wafer treated with HF solution and that a measurement of F behavior is necessary to know the mechanism of initial oxidation process.…”

Section: Measurement Of Adsorbed F Atoms On a Hf Treated Si Surface Umentioning

confidence: 99%

Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy

Yamada¹,

Hattori²,

Urisu

et al. 1995

Applied Physics Letters

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Section: Measurement Of Adsorbed F Atoms On a Hf Treated Si Surface Umentioning

confidence: 99%

Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy

Yamada¹,

Hattori²,

Urisu

et al. 1995

Applied Physics Letters

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“…Metallic contaminants picked up during the fabrication of an integrated circuit degrade the breakdown field of a SiO 2 film, 1-4 as do crystal lattice defects [4][5][6][7][8][9] and roughness of the wafer surface. 10 Although this degradation has been the subject of a large number of studies, it is still incompletely understood.…”

Section: Introductionmentioning

confidence: 99%

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Satoh

Shiota

Murakami

et al. 1996

Journal of Applied Physics

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We used heat treatment to intentionally introduce various structural defects in Czochralski silicon substrates. The type, size, and number density of the induced defects were surveyed with transmission electron microscopy, and the defects were then incorporated into SiO 2 films ͑10-50 nm thick͒ during thermal oxidation in dry O 2 . The effect of the defects on dielectric strength of the SiO 2 films was examined with a time zero dielectric breakdown method. Larger platelet oxygen precipitates caused greater decreases of the breakdown field, and precipitates smaller than the SiO 2 film thickness did not appreciably reduce the breakdown field. Every large platelet oxygen precipitate incorporated in the SiO 2 film caused a degradation. Octahedral oxygen precipitates caused little degradation. The breakdown field was higher than 7 MV/cm and did not depend much on the SiO 2 film thickness and precipitate size. We discussed possible mechanisms for the degradation due to both kinds of precipitates. Oxidation-induced stacking faults formed by a surface oxidation did not markedly reduce the breakdown field when only segments of dislocations and stacking faults were incorporated in the SiO 2 film. Another serious degradation was caused by pits that were formed by dissolving octahedral oxygen precipitates in a HF solution. The breakdown field was lower for thicker oxide films, and it recovered as the pit shape became smoother during chemical etching. We proposed that this degradation was caused by a local thinning of SiO 2 film due to stress generated in the oxidation of pits. These results suggest that voids rather than the other reported grown-in defects play the most important role in the degradation observed for as-grown silicon.

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“…31,32 Larger film roughness causes larger interfacial area, resulting in a possibility of more interface states even if their density per real interface area remains the same. 33 Furthermore, the increased roughness was most likely caused by different thermal expansion coefficients, and the residual strain in the film may also lead to increased band-gap states. 34 Our C-V and AFM results therefore suggest that sample A has both the lowest interface trap density and the smoothest Schottky anode interface.…”

mentioning

confidence: 99%

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Yan

et al. 2017

Applied Physics Letters

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By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO 2 /Si substrate significantly improves the diode performance. In contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 10 7 , a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed.The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

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Si/SiO2 interface roughness: Structural observations and electrical consequences

Abstract: Electrical and structural characteristics of the nitrogen reaction at SiO2-Si interfaces

Cited by 79 publications

References 18 publications

Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy

Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

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