Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy

Yamada, Y.; Hattori, Tadashi; Urisu, Tsuneo; Ohshima, Hisayoshi

doi:10.1063/1.114068

Cited by 10 publications

(5 citation statements)

References 10 publications

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“…3 is 0.54, suggesting that the apparent reaction order with respect to HF is 1/2. Since infrared spectroscopic results indicate that fluorine atoms are found prefer-entially at steps, 55 these are the likely sites of attack by HF, consistent with AFM studies showing preferential deposition at defects. 42 Figure 5, which shows the reaction rate as a function of ionic strength, was constructed as a test to determine whether colloidal solution phase phenomena might play an important kinetic role.…”

Section: Resultssupporting

confidence: 74%

Kinetic Analysis of Au deposition from Aqueous HF onto Si(111) by Surface Second Harmonic Generation

Ramanathan

Suni

1999

J. Electrochem. Soc.

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Deposition of Au from aqueous HF onto Si(111) has been studied by Rutherford backscattering (RBS) and surface second harmonic generation (SHG), which at 532 nm is nearly resonant with the surface plasmon of Au nanoclusters. The RBS measurements indicate that Au deposition is rate-limited by diffusion, while the SHG measurements indicate that Au cluster growth is rate-limited by either a surface reaction involving a fluoride-containing species or electron transfer. This apparent contradiction can be reconciled by proposing that initial deposition in the form of AuCN is followed by a slow electroless reduction of Au(I) accompanied by Si oxidation. By addition of HCl and KF, the solution phase equilibria can be separately manipulated, motivating further SHG experiments which indicate that HF and not HF 2Ϫ is the kinetically active fluoride-containing species. The apparent reaction order for Au cluster growth with respect to HF is approximately 1/2, and the reaction order for Au cluster growth with respect to Au(CN) 2Ϫ is near zero in the concentration range 10 Ϫ4 to 10 Ϫ5 M.

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Section: Resultssupporting

confidence: 74%

Kinetic Analysis of Au deposition from Aqueous HF onto Si(111) by Surface Second Harmonic Generation

Ramanathan

Suni

1999

J. Electrochem. Soc.

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“…Another explanation could be the H passivation of the surface, produced by the HF dip. But Yamada et al 13 showed that a water rinse hardly changed this H coverage, although it decreased the F concentration. Last, interdiffusion of Au and Si at the interface leading to an amorphous interlayer should be considered.…”

Section: Discussionmentioning

confidence: 96%

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Detavernier

Meirhaeghe

Donaton

et al. 1998

Journal of Applied Physics

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Articles you may be interested inSchottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surfacetreated p-GaNThe distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy. For samples on which an aqueous HF pretreatment of the Si substrate was applied, the histogram contains several high barrier Gaussian distribution components. After a short rinse, in de-ionized water or methanol, it was mainly the most important lower Gaussian component which was left. Using additional x-ray photoemission spectroscopy and atomic force microscopy measurements allowed us to propose a model, wherein negatively charged species containing F at the interface, are thought to be responsible for the high barrier Gaussian components.

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“…Although the hexagonal polytypes 4H-SiC and 6H-SiC are structurally equivalent to the Si(111) surface, the HF wet-chemical treatments do not yield the desired monohydride coverage on SiC(0001) surfaces as already established by a number of studies on SiC 14 that report a considerable concentration of oxygen and fluorine on SiC, similar to that of diluted HF wet etching of Si surfaces. 15,16 In the case of the HCl/HF wetetched sample, residual F and O are strongly reduced, and the ϳ5-Å overlayer estimated by SE includes the effects of surface microroughness (RMS ϳ 3 Å as measured by AFM) and of carbon contamination (organic forms adsorbed from air and/or solution).…”

Section: Wet-etching Treatmentmentioning

confidence: 99%

Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

Losurdo

Giangregorio

Capezzuto

et al. 2005

Journal of Elec Materi

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The interaction of 4H-SiC(0001) Si and 6H-SiC(0001) Si surfaces with atomic hydrogen and atomic nitrogen produced by remote radio-frequency plasmas is investigated. The kinetics of the surface modifications is monitored in real time using ellipsometry, while chemical modifications of the surface are characterized using x-ray photoelectron spectroscopy (XPS). Film morphological properties are assessed with atomic force microscopy (AFM). A two-stage substrate preparation procedure is described that effectively removes oxygen from the SiC surface at low (200°C) temperature. In the first step, the SiC surface is etched with an HCl/HF acid solution as an alternative to the conventional HF(1%)-H 2 O solution. The HCl/HF etch provides effective hydrogen passivation of the SiC surface. In the second step, the SiC surface is exposed to atomic hydrogen that selectively interacts with residual oxygen. In addition, the temperature dependence of the nitridation of SiC surfaces has also been investigated. It is found that interaction of SiC surfaces with atomic hydrogen at 200°C provides clean, smooth, and terraced surfaces suitable for epitaxial growth. In contrast, SiC surface exposure at high temperature (750°C) to atomic hydrogen and nitrogen results in very rough and disordered Si-rich surfaces. Finally, we find that the 4H-SiC surface is more reactive than the 6H-SiC surface to both species studied, independent of temperature. Surface geometry and electronic factors responsible for the observed reactivities are discussed.

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Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption spectroscopy

Cited by 10 publications

References 10 publications

Kinetic Analysis of Au deposition from Aqueous HF onto Si(111) by Surface Second Harmonic Generation

Kinetic Analysis of Au deposition from Aqueous HF onto Si(111) by Surface Second Harmonic Generation

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

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