This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput at low cost. Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50µm can be released from the temporary mechanical handler wafer in less than 1min. Bonding, adhesive, debonding and post debond clean processes were demonstrated. CMOS circuit test vehicles were shown to be compatible with this temporary bonding and debonding processes.
The ability to electrodeposit magnetic (CoNiFeCu) and semiconductor (Bi2Te3) nanotubes was demonstrated from two different electrochemical systems. Electrodeposited multilayered CoNiFeCu/Cu nanotubes were fabricated by pulsing the applied potential. The electrolyte temperature affected the tube formation and the nanotubes giant magnetoresistance (GMR) saturation field. Both p/n-type Bi2Te3 alloy nanotubes were deposited under constant potential from different electrolyte concentrations and component ratios. We report the Seebeck coefficient measurement method for Bi2Te3 alloy nanotubes obtained by electrodeposition.
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