Progress towards marketable earth-abundant chalcogenide solar cells

Todorov, Teodor K.; Gunawan, Oki; Chey, S. Jay; Monsabert, Thomas Goislard de; Prabhakar, Aparna; Mitzi, David B.

doi:10.1016/j.tsf.2010.12.225

Cited by 143 publications

(85 citation statements)

References 29 publications

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“…The method was further refined to yield 10.1 per cent power conversion efficiency in 2011 [26] and most recently to the 11.1 per cent level [102], which represents the current world record for the kesterite-based system. Enhanced fire safety inks were also obtained by replacing pure hydrazine with hydrazine-water-ammonia mixtures, yielding efficiencies of 8.1 per cent [103]. Despite the greater than 10 times improvement in device performance of CZTSSe devices since they were first demonstrated over 15 years ago (figure 1), there is still a significant performance deficit for the CZTSSe technology relative to CIGSSe.…”

Section: (Iii) Hybrid Particle-solution Approachesmentioning

confidence: 99%

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Mitzi

Gunawan

Todorov

et al. 2013

Phil. Trans. R. Soc. A.

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175

131

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While cadmium telluride and copper-indiumgallium-sulfide-selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper-zinc-tin-sulfide-selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

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Section: (Iii) Hybrid Particle-solution Approachesmentioning

confidence: 99%

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Mitzi

Gunawan

Todorov

et al. 2013

Phil. Trans. R. Soc. A.

Self Cite

175

131

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“…It belongs to the I 2 -II-IV-VI 4 semiconductor system, 5,[8][9][10][11] and is a member of the adamantine family. 12 CZTS has been identified as having a direct fundamental energy gap, with a high absorption coefficient, which is close to the maximum of the solar spectrum.…”

Section: Introductionmentioning

confidence: 99%

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Halliday

Claridge

Goodman

et al. 2013

Journal of Applied Physics

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The growth of Cu2ZnSnS4 (CZTS) polycrystals from solid state reaction over a range of compositions, including the regions which produce the highest efficiency photovoltaic devices, is reported. X-ray measurements confirm the growth of crystalline CZTS. Temperature and intensity dependent photoluminescence (PL) measurements show an increase in the energy of the main CZTS luminescence peak with both increasing laser power and increasing temperature. Analysis of the PL peak positions and intensity behavior demonstrates that the results are consistent with the model of fluctuating potentials. This confirms that the polycrystals are heavily doped with the presence of a large concentration of intrinsic defects. The behavior of the main luminescence feature is shown to be qualitatively similar over a broad range of compositions although the nature and amount of secondary phases vary significantly. The implications for thin-film photovoltaic devices are discussed.

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“…The device from a higher MEH-PPV concentration (10 mg/mL) exhibits classic PV characteristics under 1 Sun with a J sc =0.06 mA/cm 2 When the MEH-PPV thickness is decreased from 300 to 80 nm, the device performance improves systemically; the J sc is increased by about 30 folds from 0.0058 to 0.16 mA/cm 2 , FF is enlarged from 0.287 to 0.363, V oc is decreased from 0.66 to 0.28 V, and η is significantly improved from 0.0011% to 0.017%. For organic solar cells, the photoactive layer thickness is a very important factor that affecting the device performance.…”

Section: Cds Nanostructures Solar Cellsmentioning

confidence: 99%

Metal Chalcogenide Hierarchical Nanostructures for Energy Conversion Devices

Yousefi

Jamali‐Sheini

Zak

2014

Metal Chalcogenide Nanostructures for Renewable Energy Applications

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Metal chalcogenide hierarchical nanostructures as energy conversion devices were studied in this chapter. Cd-chalcogenide nanostructures were chosen as sample study due to their unique properties as energy converter. In the first step, different methods were introduced to grow this type of nanostructures. It was discussed three low cost-effective methods to grow the Cd-chalcogenide nanostructures such as thermal evaporation (chemical and physical vapor depositions), chemical bath deposition, and electrochemical methods. However, it was observed that samples were grown by a pulsed laser deposition method as a complex method. In addition, effects of growth conditions on morphology and optical properties of the nanostructures were investigated. In the second step, the fundamentals of solar energy conversion were described. Furthermore, quantum physics of semiconductor solar cells was studied. Finally, the Cd-chalcogenide nanostructures were introduced as solar energy conversion and important factors that can affect the efficiency of this type of solar cells were introduced.

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Progress towards marketable earth-abundant chalcogenide solar cells

Cited by 143 publications

References 29 publications

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Metal Chalcogenide Hierarchical Nanostructures for Energy Conversion Devices

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