Multilevel thin film processing, global planarization and advanced photolithography enables the ability to integrate complimentary materials and process sequences required for high index contrast photonic components all within a single CMOS process flow. Developing high performance photonic components that can be integrated with electronic circuits at a high level of functionality in silicon CMOS is one of the basic objectives of the EPIC program sponsored by the Microsystems Technology Office (MTO) of DARPA. Our research team consisting of members from: BAE Systems, Alcatel-Lucent, Massachusetts Institute of Technology, Cornell University and Applied Wave Research reports on the latest developments of the technology to fabricate an application specific, electronic-photonic integrated circuit (AS_EPIC). Now in its second phase of the EPIC program, the team has designed, developed and integrated fourth order optical tunable filters, both silicon ring resonator and germanium electro-absorption modulators and germanium pin diode photodetectors using silicon waveguides within a full 150nm CMOS process flow for a broadband RF channelizer application. This presentation will review the latest advances of the passive and active photonic devices developed and the processes used for monolithic integration with CMOS processing. Examples include multilevel waveguides for optical interconnect and germanium epitaxy for active photonic devices such as p-i-n photodiodes and modulators.
In this paper, we report an on-chip implementation of a Ku-band nanosecond scale time-stretching (TS) system in a 130 nm CMOS process. The system employs a linear chirp generator realized by ramping the control voltage of the voltage controlled oscillator (VCO), a broadband amplitude modulation (AM) circuit and an active dispersive delay line (DDL) improved from a previous integrated DDL, showing 1 ns dispersion over the frequency range from 12 GHz to 16 GHz. This work not only shows the experimental demonstration of the time stretching effect on the pulsed signal, but also indicates the potential for implementation of more complicated time scaling signal processing systems on chip. Index Terms -Time stretching (TS), integrated dispersive delay line (DDL), distributed amplifier (DA), voltage controlled oscillator (VCO), bandpass filter (BPF).
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