Total ionizing dose (TID) effects and radiation tests of complex
multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs)
rise up some particularities as compared to conventional ?simple? ICs. The
main difficulty is to organize informative and quick functional tests
directly under irradiation. Functional tests approach specified for complex
multifunctional VLSI devices is presented and the basic radiation test
procedure is discussed in application to some typical examples.
Abstract:The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.PACS (2008)
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