Total ionizing dose (TID) effects and radiation tests of complex
multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs)
rise up some particularities as compared to conventional ?simple? ICs. The
main difficulty is to organize informative and quick functional tests
directly under irradiation. Functional tests approach specified for complex
multifunctional VLSI devices is presented and the basic radiation test
procedure is discussed in application to some typical examples.
A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma-and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.
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