In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe , Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier's density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.
In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field; the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers' mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.
Abstract:In this paper, a theory on the determination of the diffusion coefficient of the excess minority carriers of a silicon solar cell is presented. The expression of the diffusion coefficient, related to the modulation frequency, the irradiation energy and the damage coefficient is studied and then performed by using the impedance spectroscopy method and Bode and Nyquist diagrams. Based on the diffusion coefficient, we deduce the diffusion length, the cutoff frequency and some electrical parameters obtained from the equivalent circuits of the diffusion coefficient.
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