Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

Abstract

In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe , Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier's density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

“…The incident illumination wavelength under steady [14] [15] [16] or dynamic frequency mode [17]- [21] was investigated.…”

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

“…Authors have studied the electrical parameters of the solar cell namely the fill factor, the conversion efficiency, the power, the I-V and P-V characteristics under the Influence of Irradiation [1], from the back surface recombination velocity modeling in white biased [2], under temperature with the junction surface recombination concept [3], by acquisition automatic of I-V properties and temperature [4] [5], under influence of incidence angle on a vertical Silicon Solar [6], by illumination wavelength effect on a parallel vertical junction silicon solar cell and under irradiation [7] and illumination level effects on macroscopic parameters of a bifacial solar cell [8]. Our study is to determinate these electrical parameters from the optimal base thickness of the solar cell under variation of the irradiation energy flow and extracting the values of the recombination velocity at the junction, corresponding to the maximum power.…”

Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

“…These measurements are made by maintaining the solar cell under static [2] [3] or dynamic (transient [4] [5] [6] or frequency [7] [8] [9]) regimes and thus defining the different characterization technics.…”