Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit

Abstract

Abstract:In this paper, a theory on the determination of the diffusion coefficient of the excess minority carriers of a silicon solar cell is presented. The expression of the diffusion coefficient, related to the modulation frequency, the irradiation energy and the damage coefficient is studied and then performed by using the impedance spectroscopy method and Bode and Nyquist diagrams. Based on the diffusion coefficient, we deduce the diffusion length, the cutoff frequency and some electrical parameters obtained from the equivalent circuits of the diffusion coefficient.

Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation

“…The determination of the diffusion coefficient and the global rate of generation proves fundamental for the study of a solar cell in static regime or frequency dynamic regime. Indeed, several studies have been done on the global rate of generation and the diffusion coefficient [10] in order to improve the performance of conversion. Indeed, this last describes the diffusive nature of minority carriers in material, in other words it expresses the capacity of the carriers to be spread within material.…”

“…i) Diffusion coefficient according to the frequency, the damage coefficient and radiation energy [10]. The terms of the diffusion coefficient and diffusion length depending on the radiation energy and damage coefficient by frequency dynamic regime are given respectively by the following equations:…”

Influence of Temperature on the Serial and Shunt Resistance of a Silicon Solar Cell under Polychromatic Illumination in Static Mode

“…This defect is symbolized by the series resistance. Therefore, for its determination, we adopt an equivalent electrical diagram of a solar cell that operates in the vicinity of the open circuit and is represented by the figure [26,27]. We note that for low values of the recombination velocity (Sf <10 2 cm/s), the series resistance is constant and low.…”

Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

“…His determination is fundamental for different techniques characterization of solar cells. Many studies have been conducted on the minority carrier diffusion coefficient under the influence of temperature, damage coefficient, irradiation flux and magnetic field in static regime [1] [2] [3] or dynamic frequency regime [4] [5] [6] [7].…”