Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation

Abstract

In this study, a method for determining the intrinsic recombination velocity at the junction of a silicon solar cell is presented. The expression of intrinsic recombination velocity at the junction was established under irradiation in frequency modulation. Based on this expression, an electrical model of the intrinsic recombination velocity at the junction is presented.

Effect of Wavelength on the Photocurrent and Photovoltage of Vertical Parallel Silicon Solar Cells under Steady State Condition

“…This is undoubtedly an advantage of vertical parallel junction solar cells. We can also observe a decrease of the excess minority carrier density for the chosen wavelength as seen with the other parameters [19].…”

“…These figures allow observing an increase in photocurrent density with the junctıon recombination velocity [24][25][26][27]; the photocurrent density and reaches a maximum where it varies microscopic with the junctıon recombınatıon velocity. Indeed, since the junctıon recombination velocity reflects the flow of carriers across the junction [11,15,18,19], increasing the junctıon recombination, velocity means to increase the movement of carriers through the terminal and a larger collection of carriers. In other words, it is thus an increase in the current density.…”

“…4(a) and Fig. 4 [15,18,19,28]. What leads us to this work to propose a method of junction recombination velocity determination, initiating the short-circuit Sf sc and limiting the open circuit Sf oc .…”

Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination

“…A and B are obtained with the boundary conditions at the emitter -base junction(x = 0) and at the back surface(x = H) of the cell (Sane et al, 2013;Ndiaye et al, 2015) expressed as:…”

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

“…Sf 0 is the excess minority carrier recombination velocity associated with shunt resistance-induced charge carrier losses [24] [25], which characterizes the quality of the solar cell [15] [16] [20]. The expression intrinsic recombination velocity at the junction is given in static regime [26] [27] and under polychromatic illumination, by [28] and applied her for solar cell under irradiation as:…”