Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

Diouf, Seydina; Ndiaye, Mor; Thiam, N.; Traore, Youssou; Ba, Mamadou Lamine; Diatta, Ibrahima; Diouf, Marcel Sitor; Mballo, Oulimata; Thiam, Ababacar; Ly, I.; Sissoko, G.

doi:10.4236/epe.2019.1110023

Cited by 10 publications

(8 citation statements)

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“…Minority carrier diffusion coefficient is influenced by external conditions applied to solar cell. It expression is dependent of parameter such as, temperature [52], magnetic field [10], charged particles fluence and intensity of irradiation [53], and others combined external conditions [42] [54] [55].…”

Section: Ac Diffusion Coefficient and Ringing Frequencymentioning

confidence: 99%

“…The ac photocurrent produced by the base, is studied at the resonance frequencies (ωr) imposed by specific magnetic field values to the minority carrier diffusion coefficient D(ω, B) [40] [41] [42] [43]. It is then analyzed at the high values of the junction recombination velocity (Sf) that impose the short circuit operating point to the solar cell.…”

Section: Introductionmentioning

confidence: 99%

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Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Ndiaye¹,

Gueye²,

Fall³

et al. 2020

JEMAA

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The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers' diffusion coefficient (D(ω, B), in the (p) base leads to maximum values (Dmax) at resonance frequencies (ωr). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, ωr and B, are then established, and will be data for industrial development of low-cost solar cells for specific use.

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Section: Ac Diffusion Coefficient and Ringing Frequencymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Ndiaye¹,

Gueye²,

Fall³

et al. 2020

JEMAA

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“…The optimum thickness values are extracted from Figure 6 and are shown in Table 1 below. They are represented, for each temperature, by the abscess of the intersection of the two curves representing the recombination velocity expressions [19,20,27,45,49,50,51,52], one of which also represents the intrinsic velocity at the junction [11], allowing to obtain the maximum of extracted photocurrent density The results of Table 1 allow curves representing variations in optimum width versus both the temperature (T) ( Figure. applied magnetic field [19,20] doping rate [49] magnetic field and temperature [50,51] flow and intensity of irradiation by charged particles [27,45] the excess minority carrier's recombination velocity at the backunder the action of: the variation in the monochromatic absorption coefficient [52].…”

Section: Theorymentioning

confidence: 99%

Lamella Silicon Optimum Width Determination Under Temperature

Ndiaye¹,

Ba²,

Ba³

et al. 2020

IJAR

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Geometric parameters are an important data for the choice of solar cell architecture, for better conversion performance. As poor optoelectronic material is used, i.e. short minority carrier's diffusion length and under concentrated light which increases the temperature, it is then important to optimize the width of the lamella in order to have better photogenerated charge collection. Thus the intent of this work is the determination of the width of the lamella structure, presented through phenomelogical parametersmodeling study. These are the diffusion length and coefficient, as well as the surfacerecombination velocity of the photogenerated carriers in the base of the lamella silicon. The result gives a mathematical relationship between the optimum width and the operating temperature of the lamella solar cell, allowing to influence the industrial manufacturing process for the material economy.

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“…The operating conditions are various regimes i.e. : static [13] [14] [15] and dynamic [16] [17] [18] [19]. The phenomenological parameters to be determined are, diffusion length (L), diffusion coefficient (D), lifetime (τ), surface recombination velocities respectively at the junction (Sf) and the rear (Sb) [20] [21] [22] [23] [24].…”

Section: Introductionmentioning

confidence: 99%

n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

Thiaw¹,

Ba²,

Ba³

et al. 2020

JEMAA

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Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n +-p-p + under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier's recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.

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Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

Cited by 10 publications

References 8 publications

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Lamella Silicon Optimum Width Determination Under Temperature

n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

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Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

Cited by 10 publications

References 8 publications

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Lamella Silicon Optimum Width Determination Under Temperature

n&lt;sup&gt;+&lt;/sup&gt;-p-p&lt;sup&gt;+&lt;/sup&gt; Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

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n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field