n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

Abstract

Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n +-p-p + under magnetic field. From the magneto transport equation relative to excess minority carriers in the base, with specific boundary conditions, the photocurrent is obtained. From this result the expressions of the carrier's recombination velocity at the back surface are deducted. These new expressions of recombination velocity are plotted according to the depth of the base, to deduce the optimum thickness, which will allow the production, of a high short-circuit photocurrent. Calibration relationships of optimum thickness versus magnetic field were presented according to study ranges. It is found that, applied magnetic field imposes a weak thickness material for solar cell manufacturing leading to high short-circuit current.

Optimisation de l’épaisseur de la base de la photopile (n+/p/p+) au silicium en régime statique sous éclairement polychromatique : Influence de la température et du taux de dopage

“…La technique [31][32][33][34] de détermination de l'épaisseur optimum de la base, est représentée par la figure 7, qui donne le profil de Sb1 et Sb2 en fonction de l'épaisseur de la base pour différentes valeurs de la température. Les résultats pour trois taux de dopage choisis sont obtenus par la même technique.…”

Optimization of the thickness of the base of the photopile (N+/P/P+) with silicon static diet under polychromatic illumination: influence of temperature and doping rate

“…The technique [31][32][33][34] determining the optimum thickness of the base, is represented in Figure 7, which gives the Sb1 and Sb2 profile as a function of the base depth, for different temperature values. The results for three doping rates chosen are obtained by the same technique.…”

“…Thus the tables 1, 2, and 3 give the results of the optimum thickness as a function of the temperature of the base of the solar cell at different doping rates. The rise in temperature and doping rate leads to a decrease in optimum base thickness [21,26,[31][32][33][34] . From the temperature (T = 300K), we see growth as a function of the temperature of the optimum thickness for a doping base (Nb = 10 16 cm -3 ).…”

Derivative of Ac back surface recombination velocity as applied to n+/p/p+ silicon solar cell optimum base thickness determination: Effect of both temperature and frequency

“…The Ac photocurrent density Jph (Sf, Sb, D(ω, T), H α) is obtained and allows to deduce the AC expression Sb(D(ω, T), H α) of minority charge carriers dynamic recombination velocity [11][12][13][14][15] on the base back side (p/p+). The graphic study of this expression as a function of thickness (H), made it possible to deduce a technique for determining the optimum thickness [16][17][18][19][20][21] of the base (Hopt). This work presents the technique of determining the optimum thickness of the base of the solar cell illuminated by its front face (n+), by exploiting the curve of minority carriers dynamic recombination velocity Sb(H, D(ω , T), α), as a function of (H), through the point (Hopt) of zero derivative.…”