Optimization of the thickness of the base of the photopile (N+/P/P+) with silicon static diet under polychromatic illumination: influence of temperature and doping rate

Abstract

the optimum thickness of the given doping rate base, from silicon solar cell subjected to polychromatic illumination and temperature variation, is obtained by studying the expressions of the recombination velocity of minority carriers on the rear side. The optimum thickness modeled according to the temperature by a mathematical correlation, offers prospects for saving raw material in the realization of the solar cell, with low thickness.