Derivative of Ac back surface recombination velocity as applied to n+/p/p+ silicon solar cell optimum base thickness determination: Effect of both temperature and frequency

Abstract

A transcendental equation is obtained, from the derivative of the expression of minority carriers dynamic recombination velocity on the back side of the base of an (n+/p/p +) silicon solar cell, under temperature variation. The elaborate graphic solution leads to the determination of the base optimum thickness of the solar cell under long wavelength monochromatic illumination. It is then modeled as a decreasing function of temperature, for the different frequency domains studied. The analysis of the results suggests a material saving (Si) during the industrial realization of the solar cell.

Determination of the Base Optimum Thickness of Back Illuminated (n<sup>+</sup>/p/p<sup>+</sup>) Bifacial Silicon Solar Cell, by Help of Diffusion Coefficient at Resonance Frequency

“…-The absorption-generation of minority carriers in low penetration therefore close to the incident rear surface (p/p + ) [12] [16] [21] [57] [65].…”

“…[24] [50][51] [57][65] of these physical phenomena leads to a decrease in the optimum thickness of the base.…”