This study proposes a numerical technique for the optimisation of the deposited layer thickness in electrochemical cells using the insulating shields. The aim is to develop a systematic adjustment of the insulating shield position in order to obtain a more uniform distribution of the deposited layer at the cathode. The optimal position of the insulating shield is managed by a genetic algorithm. Both the layer thickness profile and the position of the insulating shield are calculated by using the level set method. The main advantage of this technique is that during the whole computational process, the same triangular finiteelement mesh with a fixed connectivity is used. An example related to the optimisation of the layer thickness distribution in the vicinity of a singularity (incident angle between the electrode and insulator ¼ 1808), using an insulating shield is presented.
Abstract. This paper proposes a general applicable algorithm for the optimization of the current density distribution in the electrochemical cells using the insulating shields during the electroplating process. The innovative aspect is that the position of the insulating shield is displaced over a number of predefined time steps convecting its surface proportional with and in the direction of a well chosen rate provided by a genetic algorithm. The aim of this method is to develop a systematic modification of the insulating shield position in order to get a more uniform distribution of the current density, hence a more uniform deposited layer at the cathode. As the displacement of the insulating shield is performed with the Level Set Method, the re-meshing of the computational domain with finite elements is not required anymore. Finally an example related to the optimization of the current density distribution in the vicinity of a singularity (incident angle between the electrode and insulator = 180 o ), using an insulating shield will be presented.
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