Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias. Journal of Applied Physics, 118(21), [215701]. DOI: 10.1063/1.4936780Publisher's PDF, also known as Version of record
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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-terms Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.
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