“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Uren, Michael J.; Karboyan, Serge; Chatterjee, Indranil; Pooth, Alexander; Moens, P.; Banerjee, Abhishek; Kuball, Martin

doi:10.1109/ted.2017.2706090

Cited by 184 publications

(131 citation statements)

References 31 publications

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“…This however, does not prevent a high dislocation density, and therefore, the existence of trapping centres and charging paths is inevitable. In this case, the current collapse severity can be reduced by increasing the leakage current in the channel layer towards the surface to release trapped electrons, as suggested in [24]. This implies that there would be a trade-off between the leakage current in the HEMT and the severity of the current collapse such that a simultaneous improvement in both parameters is not possible.…”

Section: Role Of Threading Dislocations In Gan Hemtsmentioning

confidence: 99%

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Alshahed

Heuken

Alomari

et al. 2018

IEEE Trans. Electron Devices

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Abstract-In this work the advantages of GaN HEMTs grown on native GaN substrates over GaN/Si or GaN/Sapphire substrates are investigated, and correlated with epitaxial quality. TEM plane view and cross section analysis of GaN/GaN revealed dislocation density lower than 1 × 10 6 cm −2 , which is at least 3 orders of magnitude lower than the case of GaN/Si or GaN/Sapphire. In the case of GaN/Si, the dislocations did not necessarily originate from the substrate/nucleation layer interface, but the strain relief and isolation buffer stacks were main contributors to the dislocation density. GaN/GaN HEMTs demonstrated superior electrical and thermal performance. GaN/GaN demonstrated 3 orders of magnitude lower off-state leakage, current collapse (Ron increase) after stress bias less than 15% compared to 50% in the case of GaN/Si, and 2% drop of the onstate current due to self-heating in DC operation as compared to 13% and 16% for GaN/Si and GaN/Sapphire respectively. The GaN/Si thermal performance approached GaN/GaN only by substrate removal. Therefore GaN/GaN can allow high on-state current, low off-state leakage current, minimal current collapse, and enhanced thermal dissipation capability at the same time, which can be directly correlated to the absence of high dislocation densities.

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Section: Role Of Threading Dislocations In Gan Hemtsmentioning

confidence: 99%

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Alshahed

Heuken

Alomari

et al. 2018

IEEE Trans. Electron Devices

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“…The technique is especially sensitive to changes in the resistivity of the UiD (Unintentionally Doped) channel and C:GaN [14,15]. Interpretation is discussed in more detail in [11,[16][17][18]. TLM structures with a contact gap of 35 µm were used and the substrate was swept to −600V and back to 0V at 9.2V/s while a source to drain voltage of 1V was applied.…”

Section: B Substrate Rampmentioning

confidence: 99%

“…The results described here are entirely consistent with a "leaky dielectric" model for buffer induced current-collapse. [11] II. DEVICES AND MEASUREMENTS GaN-on-Si wafers were grown with nominally identical epitaxy and have been described in detail in another publication [10].…”

Section: Introductionmentioning

confidence: 99%

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

Waller

Gajda

Pandey

et al. 2017

IEEE Trans. Electron Devices

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“…Although these preferential leakage paths are required for low current collapse buffers, their origin and the depths to which they extend are not fully understood. Previously suggested origins include contact spiking, metal in-diffusion and dislocation decoration [3], [7], all of which are associated with increased vertical leakage.…”

Section: Introductionmentioning

confidence: 99%

“…Reducing the resistivity in the top layers of the epitaxy has been linked to the suppression of current collapse due to the ease with which the trapped charge can be neutralized [3]- [6]. This can be achieved, at least partially, by preferential leakage under the contacts which has been observed experimentally [7] and is routinely included in simulation [8], [9].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

Rackauskas

Uren

Stoffels

et al. 2018

IEEE Electron Device Lett.

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Enhanced leakage paths below Ti-/Al-based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitancevoltage technique, the depth of these preferential leakage paths was determined to be ∼1.6 µm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown, and buffer charge storage.

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“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Cited by 184 publications

References 31 publications

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

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“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Cited by 184 publications

References 31 publications

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

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Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN_x Deposition