In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 µm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition between the inhomogeneous broadening (due to the QD size dispersion) and the homogenous broadening as well as a nonlinear gain variation associated to a multimode laser emission. The double laser emission and the temperature dependence of lasing spectra of self-assembled InAs/InP quantum dot lasers is studied both experimentally and theoretically.
Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55 mm InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed.
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