Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments

Abstract

In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 µm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition between the inhomogeneous broadening (due to the QD size dispersion) and the homogenous broadening as well as a nonlinear gain variation associated to a multimode laser emission. The double laser emission and the temperature dependence of lasing spectra of self-assembled InAs/InP quantum dot lasers is studied both experimentally and theoretically.

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

“…Here, we present a coupled set of rate equations to calculate the lasing properties of quantum dot lasers. Our model describing the carrier dynamics in QD lasers is based on the experimental works [10,24,25]. It is assumed that only a single, discrete electron-hole ground state is formed inside a quantum dot and that charge neutrality always holds on each dot.…”

Numerical simulation of a mode‐locked quantum dot external cavity laser

“…The other parameters can be found in Table 1. The values of these parameters were obtained in [21–25]. Some MQW laser parameters are also included in Table 1 for use later in this paper.…”

Design of multiple quantum dot semiconductor lasers with enhanced modulation capabilities using spatially resolved time dependent model

“…Dynamical models for quantum dot (QD) lasers with different levels of detail exist in literature [1][2][3]. However, those models are not spatially resolved and do not include the energy band modification due to carrier-carrier interaction.…”