This lettercharacterizes the generationrecombination noise of Ge pFinFETs, for three different integration schemes: shallow trench isolation (STI) first strained devices; STI last for relaxed and strained ones. It is shown that many Lorentzians exhibit a V GS -independent and thermally activated characteristic frequency. This points out that the responsible defects are located inside the fin and they are found for all studied process conditions. One type of defect with a time constant value of 10 ms at room temperature is process-independent. Regarding the defects, their activation energies and hole capture cross sections have been extracted for fin widths varying from planarlike devices to narrow ones. It is shown that the STI last strained and relaxed devices yield a surface trap density three orders of magnitude above the typical value obtained for a blanket wafer.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.