High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

Extreme ultraviolet lithography (EUVL) was thoroughly reviewed over a broad range of topics, including history, tools, source, metrology, condenser and projection optics, resists, and masks. Since 1988, many studies on EUVL have been conducted in North America, Europe, and Japan, through state sponsored programs and industrial consortiums. To date, no “show stopper” has been identified, but challenges are present in almost all aspects of EUVL technology. Commercial alpha lithography step-and-scan tools are installed with full-field capability; however, EUVL power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 180W IF power, current tools can supply only approximately 55–62W. EUV IF power has been improved gradually from xenon- to tin-discharge-produced plasma or laser-produced plasma. EUVL resist has improved significantly in the last few years, with 25nm 1:1 line/space resolution being produced with approximately 2.7nm (3σ) line edge roughness. Actual adoption of EUVL will depend on the extension of current optical lithography, such as 193nm immersion lithography, combined with double patterning techniques. Mask fabrication and application technologies may be the most substantial challenges. Creating a defect-free EUVL mask is currently an obstacle to its application, although a combination of removable pellicle and thermophoretic protection may overcome nonpellicle challenge. Cost of ownership is a critical consideration for EUVL; nevertheless, it has been predicted that EUVL may be in pilot production at 32nm and in large-scale production at 22nm with the capability to extend to the next technology node.

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Die singulation, also known as wafer dicing, is reviewed in terms of the brief history, critical challenges, characterization of singulation quality, different singulation technologies and underlying mechanisms, and post-singulation die strength enhancement. Mechanical blade dicing has been the workhorse of die separation in the semiconductor manufacturing process. It faces growing challenges due to the adoption of copper/low-k dielectric interconnect structures, thin and ultra-thin wafers, die attach films, narrow dicing streets, and complex stacked structures on the dicing streets. Key dicing quality characteristics are chipping, delamination, kerf geometry, die side wall damage, die surface contamination, and die strength degradation. Various die singulation technologies have been developed to address these challenges and quality issues, including dicing by thinning, laser based approaches, laser and mechanical hybrid method, and plasma dicing. Die strength is a critical parameter for thin and ultra-thin dies. Post-dicing die strength enhancement is becoming the complement of most dicing technologies to achieve dies with high fracture strength. Plasma dicing has the potential to achieve much higher die strengths than all the other dicing approaches.

Several experiments, related to controlled thermonuclear fusion research and highly relevant for large size tokamaks, including ITER, have been carried out in ADITYA, an ohmically heated circular limiter tokamak. Repeatable plasma discharges of a maximum plasma current of ~160 kA and discharge duration beyond ~250 ms with a plasma current flattop duration of ~140 ms have been obtained for the first time in ADITYA. The reproducibility of the discharge reproducibility has been improved considerably with lithium wall conditioning, and improved plasma discharges are obtained by precisely controlling the position of the plasma. In these discharges, chord-averaged electron density ~3.0–4.0  ×  1019 m−3 using multiple hydrogen gas puffs, with a temperature of the order of ~500–700 eV, have been achieved. Novel experiments related to disruption control are carried out and disruptions, induced by hydrogen gas puffing, are successfully mitigated using the biased electrode and ion cyclotron resonance pulse techniques. Runaway electrons are successfully mitigated by applying a short local vertical field (LVF) pulse. A thorough disruption database has been generated by identifying the different categories of disruption. Detailed analysis of several hundred disrupted discharges showed that the current quench time is inversely proportional to the q edge. Apart from this, for volt–sec recovery during the plasma formation phase, low loop voltage start-up and current ramp-up experiments have been carried out using electron cyclotron resonance heating (ECRH). Successful recovery of volt–sec leads to the achievement of longer plasma discharge durations. In addition, the neon gas puff assisted radiative improved confinement mode has also been achieved in ADITYA. All of the above mentioned experiments will be discussed in this paper.