Extreme ultraviolet lithography and three dimensional integrated circuit—A review

Influence of deposition rate on interface width of Mo/Si multilayers

“…ACCEPTED MANUSCRIPT 3 full width at half maximum (FWHM or/and bandwidth) at 13.5 nm wavelength were achieved [12]. At Fraunhofer-Institut für Werkstoff und Strahltechnik, high reflectivity was obtained by using additional ion bombardment during multilayer fabrication, although the surface roughness of the substrate was up to 0.7 nm [13].…”

“…So the industry has been working on extending resolution by decreasing the exposure wavelength. Extreme ultraviolet (EUV) lithography at the wavelength of 13.5 nm is regarded as the most promoting technology [2,3]. High quality EUV reflective optics that consists of Mo/Si multilayers are required in EUV lithography system (Fig.…”

Experimental observation of laser-produced Sn extreme ultraviolet source diameter for high-brightness source

“…Actinic metrology is required to predict printing behavior of hot spot in the mask pattern. Up to date, there is no cost effective actinic EUV mask inspection tool available other than Z-pinch EUV source and expensive synchrotron radiation sources [5][6][7]. Z-pinch EUV sources suffer from lower brightness of 10 W/mm 2 sr due to its inherent larger plasma source diameter larger than 350 µm [8].…”

Electrochemical nanosensors: advances and applications

“…142 First, further development of EUV power sources is required. Current available lasers are of low power and thus longer processing times are needed.…”