2015
DOI: 10.1016/j.tsf.2015.06.009
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Influence of deposition rate on interface width of Mo/Si multilayers

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Cited by 5 publications
(2 citation statements)
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“…In order to realize the sharp interface, interface roughness and interface diffuseness have been recognized as two main aspects to be pursued. Recently, much work has been done to avoid the interface imperfections, such as deposition rate [6] , thickness uniformity [7] , and interface engineering [8][9][10][11] . The secondary ion mass spectrometry technique indicated that the interface roughness of the Si-on-Mo layer was varying from 1.1 to 2.2 nm [9] .…”
mentioning
confidence: 99%
“…In order to realize the sharp interface, interface roughness and interface diffuseness have been recognized as two main aspects to be pursued. Recently, much work has been done to avoid the interface imperfections, such as deposition rate [6] , thickness uniformity [7] , and interface engineering [8][9][10][11] . The secondary ion mass spectrometry technique indicated that the interface roughness of the Si-on-Mo layer was varying from 1.1 to 2.2 nm [9] .…”
mentioning
confidence: 99%
“…Large initial tensile and compressive stresses were found in the Mo and Si layer respectively, suggesting interface formation. The interface formation of the Mo/Si system is known and investigated [38,39,40,41,42,43], for 1. 6.…”
Section: Scope and Outline Of The Thesismentioning
confidence: 99%