The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.
Silicon carbide (SiC) exhibits promising material properties for nonlinear integrated optics. We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high-confinement SiC microring resonators with sub-micron waveguide cross-sectional dimensions. The Q factor of SiC microring resonators in such a sub-micron waveguide dimension is improved by a factor of six after surface roughness reduction by applying a wet oxidation process. We achieve a high Q factor (73,000) for such devices and show engineerable dispersion from normal to anomalous dispersion by controlling the waveguide cross-sectional dimension, which paves the way toward nonlinear applications in SiC microring resonators.
A high-performance filter is the key component in 5G communication. A surface acoustic wave (SAW) resonator fabricated on a piezoelectric thin film instead of piezoelectric bulk substrate can achieve a higher quality factor (Q) and a lower temperature coefficient of frequency (TCF).Here we performed the fabrication of 4 in. 42°rotated Y-cut LiTaO 3 -on-insulator (LTOI) hybrid substrate applied for the surface acoustic wave (SAW) radio-frequency (RF) resonators. This heterogeneous substrate combining a submicrometer single crystalline LT thin film on a Si wafer was achieved by using the ion-cut process with direct wafer bonding. The kinetics of surface blistering and the defects evolution in 75 keV H + implanted LT samples were investigated by annealing at various temperatures ranging from 170 to 230 °C. The activation energy for forming the blistering crack is around 1.34 eV. After direct wafer bonding, a wafer-scale LT thin film with single crystalline quality was successfully transferred onto the Si substrate. The crystalline quality was further improved via a postannealing at 400 °C, which is demonstrated by the reduction of the full width at half-maximum of the XRD rocking curve from 167 to 48 arcsec. The roughness of the blistering surface of the LT thin film was significantly reduced from 12 to 0.2 nm by an optimized chemical mechanical polishing (CMP) process, in which the damage layer of 30 nm was removed as well. Finally, a 350 MHz one-port SAW resonator based on the fabricated LTOI substrate was demonstrated.
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.
We demonstrate efficient four-wave mixing in high Q 4H-SiC microring resonators. We achieve a four-wave mixing conversion efficiency of-21.7 dB in a microring resonator with 79 mW pump power. Thanks to the strong light confinement in SiC waveguides with sub-micron cross-section dimensions, a high nonlinear parameter (γ) of 12.5 W-1 m-1 is obtained, from which the nonlinear refractive index (n2) of 4H-SiC is estimated to be 9.2±0.4×10-19 m 2 /W at telecom wavelengths.
Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.
We report four-wave mixing with different polarization and spatial modes in a single 4H-silicon carbide photonic device. Our device shows great potential to perform high-dimensional multiplexing for optical communication and high-dimensional entanglement in quantum networks. We use a polarization-insensitive grating coupler and a multimode microring resonator that supports three polarization and spatial mode resonances. Finally, we show the polarization dependence of the third-order nonlinearity of 4H-silicon carbide. The measured nonlinear refractive index of the light polarized along the extraordinary axis, which is n2,TM = (13.1 ± 0.7) × 10−19 m2/W, is twice as large as that of the light polarized along the ordinary plane, n2,TE = (7.0 ± 0.3) × 10−19 m2/W, indicating that the extraordinary polarization is more efficient for nonlinear experiments in the 4H-silicon carbide integrated platforms as compared to the ordinary polarization.
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