Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Yi, Ailun; Zheng, Yi; Huang, Hao; Lin, Jiajie; Yan, Yong; You, Tiangui; Huang, Kai; Zhang, Shibin; Shen, Chen; Zhou, Min; Huang, Wei; Zhang, Jiaxiang; Zhou, Shengqiang; Ou, Haiyan; Ou, Xin

doi:10.1016/j.optmat.2020.109990

Cited by 53 publications

(40 citation statements)

References 34 publications

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“…4H-SiCOI Microring Resonator Fabrication: The 4H-SiCOI chip was fabricated through the ion-cut process. [47] The waveguide fabrication started from the 4H-SiCOI chip with 500 nm SiC top layer and 2:1 μm buried oxide layer. The positive resist AR-P 6200.09 was spun on the chip with a thickness of 210 nm.…”

Section: Methodsmentioning

confidence: 99%

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Shi

Fan

Hansen

et al. 2021

Advanced Photonics Research

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4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in fundamental measurements and practical applications. Herein, the thermo‐optic effects in a 4H‐SiC microring resonator are comprehensively studied, by means of both temperature tuning and self‐heating. The thermo‐optic coefficient and the ratio between the thermal absorption and the thermal diffusion of 4H‐SiC are quantitatively measured to be and , respectively. Considering the acquired thermal properties, Kerr‐nonlinearity‐based dual‐pump optical parametric oscillation (OPO) is experimentally achieved, and thus, it is demonstrated that broadband solitons can feasibly be generated through thermal tuning of 4H‐SiC‐on‐insulator (SiCOI) microring resonators.

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Section: Methodsmentioning

confidence: 99%

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Shi

Fan

Hansen

et al. 2021

Advanced Photonics Research

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“…The 4H-SiCOI chip is fabricated by the Smart-cut process [4]. The microring resonator is defined by electronbeam lithography with the positive resist AR-P 6200, coated on the 4H-SiCOI chip.…”

Section: Dual-pump Optical Parametric Oscillation In a 4h-sic-on-insu...mentioning

confidence: 99%

Dual-pump Optical Parametric Oscillation in a 4H-SiC-on-insulator Microring Resonator

Shi

Fan

et al. 2021

2021 Conference on Lasers and Electro-Optics Europe &Amp; European Quantum Electronics Conference (CLEO/Europe-EQEC)

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“…SiC photonics has been developed for over a decade [19][20][21][22][23][24][25] , one of the major obstacles for the practical application is the difficulty of fabricating ultralow optical loss SiC thin films on the wafer-scale. 4H-silicon-carbide-on-insulator (4H-SiCOI) formed by ion-cutting technique has been optimized 26 . Although it has a wafer-level size, the material absorption generated by the ion-implantation-induced defects was considered as the main loss source 24 and the Q factor is limited to below 10 5 .…”

Section: Introductionmentioning

confidence: 99%

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

et al. 2021

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The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

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Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Cited by 53 publications

References 34 publications

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Dual-pump Optical Parametric Oscillation in a 4H-SiC-on-insulator Microring Resonator

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

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