Room-temperature coherent control of implanted defect spins in silicon carbide

Yan, Fei; Yi, Ailun; Wang, Jun Feng; Li, Qiang; Yu, Pei; Zhang, Jia Xiang; Gali, Ádám; Wang, Ya; Xu, Jin‐Shi; Ou, Xin; Li, Chuan Feng; Guo, Guanhua

doi:10.1038/s41534-020-0270-8

Cited by 36 publications

(29 citation statements)

References 36 publications

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“…[38][39][40][41][42] In contrast, much less is known about the longitudinal spin relaxation of divacancy qubits in SiC. The T 1 time was reported for specific values of the magnetic field at various temperatures [43][44][45] , however, no systematic studies on the environmental couplings and resulting spin relaxation processes have been carried out yet. Even less is known about environmental resonances that may give rise to T 1 spectroscopy and dynamic nuclear polarization in SiC.…”

Section: Introductionmentioning

confidence: 99%

Dipolar spin relaxation of divacancy qubits in silicon carbide

Lindvall¹,

Són²,

Abrikosov³

et al. 2021

Preprint

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Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities, including but not limited to, 64 ms coherence time, spin-to-photon interfacing, and sizable, 10% − 30% room-temperature read-out contrast, all of these in an industrial semiconductor host. Despite these great demonstrations, there are still numerous open questions on the physics of divacancy point defects. In particular, spin relaxation, which sets the fundamental limit for the spin coherence time, has not been thoroughly studied yet. Here, we carry out theoretical simulations of environmental spin induced spin relaxation processes of different divacancy configurations in 4H-SiC. We reveal magnetic field values where the longitudinal spin relaxation time T 1 drops resonantly due to the coupling to either 29 Si and 13 C nuclear spins or electron spins associated with other defects and dopants. We quantitatively analyze the dependence of the T 1 time on the concentration of the defect spins and the applied magnetic field in the most relevant cases and provide a simple analytical expression allowing either for estimation of the T 1 time in samples with known spin defect concentration or for estimation of the local spin defect concentration of an ensemble or a single divacancy qubit from the measured relaxation rates.

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Section: Introductionmentioning

confidence: 99%

Dipolar spin relaxation of divacancy qubits in silicon carbide

Lindvall¹,

Són²,

Abrikosov³

et al. 2021

Preprint

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“…Spin defects in solid-state materials have become an important candidate of qubits during the last two decades for their possible applications in quantum communication, quantum computation and quantum sensing [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] . Nitrogen-vacancy (NV) centers in diamond have been most frequently explored [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

“…There has been sophisticated technologies for largescale crystal growth of SiC and mature processes of industrial production of SiC-based devices. So the defects in SiC, which have been explored as bright single photon sources [6][7][8] and potential qubits [9][10][11][12][13][14][15] , have attracted great interests.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of divacancy spin coherence in implanted silicon carbide

Lin,

Yan,

et al. 2021

Preprint

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Spin defects in silicon carbide (SiC) have attracted increasing interests due to their excellent optical and spin properties, which are useful in quantum information processing. In this work, we systematically investigate the temperature dependence of spin properties of divacancy defects in implanted 4H-SiC. The zero-field splitting parameter D, the inhomogeneous dephasing time T * 2 , the coherence time T2, and the depolarization time T1 are extensively explored in a temperature range from 5 K to 300 K. Two samples implanted with different nitrogen molecule ion fluences (N + 2 , 10 14 /cm 2 and 10 13 /cm 2 ) are investigated, whose spin properties are shown to have similar temperature-dependent behaviors. Still, the sample implanted with a lower ion fluence has longer T2 and T1. We provide possible theoretical explanations for the observed temperature-dependent dynamics. Our work promotes the understanding of the temperature dependence of spin properties in solid-state systems, which can be helpful for constructing wide temperature-range thermometers based on the mature semiconductor material.

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“…While the work detailed here focuses on quantum sensing with NV centres in diamond, the protocol we examine can be readily applied to any other single-qubit quantum sensor [26,27].…”

Section: Introductionmentioning

confidence: 99%

Resource-efficient adaptive Bayesian tracking of magnetic fields with a quantum sensor

Craigie,

Gauger,

Altmann

et al. 2020

Preprint

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By addressing single electron spins through Ramsey experiments, nitrogen-vacancy centres can act as high-resolution sensors of magnetic field. In applications where the magnetic field may be changing rapidly, total sensing time is crucial and must be minimised. Bayesian estimation and adaptive experiment optimisation protocols work by computing the probability distribution of the magnetic eld based on measurement outcomes and, by computing acquisition settings for the next measurement. These protocols can speed up the sensing process by reducing the number of measurements required. However, the computations feeding into the next iteration measurement settings must be performed quickly enough to allow realtime updates. This paper addresses the issue of computational speed by implementing an approximated Bayesian estimation technique, where probability distributions are approximated by a superposition of Gaussian functions. Given that only three parameters are required to fully describe a Gaussian, we find that the magnetic field probability distribution can typically be described by fewer than ten numbers, achieving a reduction in the number of operations by factor 20 compared to existing approaches, allowing for faster processing.

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Room-temperature coherent control of implanted defect spins in silicon carbide

Cited by 36 publications

References 36 publications

Dipolar spin relaxation of divacancy qubits in silicon carbide

Dipolar spin relaxation of divacancy qubits in silicon carbide

Temperature dependence of divacancy spin coherence in implanted silicon carbide

Resource-efficient adaptive Bayesian tracking of magnetic fields with a quantum sensor

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