We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of -parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.
In this work, we present the influence of eddy currents, skin and proximity effects on high frequency losses in planar terahertz Schottky diodes. The high frequency losses, particularly losses due to the spreading resistance, are analyzed as a function of the ohmic-contact mesa geometry for frequencies up to 600 GHz. A combination of 3-D EM simulations and lumped equivalent circuit based parameter extraction is used for the analysis. The extracted low frequency spreading resistance shows a good agreement with the results from electrostatic simulations and experimental data. By taking into consideration the EM field couplings, the analysis shows that the optimum ohmic-contact mesa thickness is approximately one-skin depth at the operating frequency. It is also shown that, for a typical diode, the onset of eddy current loss starts at ~200 GHz; and the onset of a mixture of skin effect and proximity effect occurs around ~400 GHz.
We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits. The thermal model is developed for an n-anode multiplier via a thermal resistance matrix approach. The non-linear temperature responses of the material are taken into consideration by using a linear temperature-dependent approximation for the thermal resistance. The electro-thermal model is capable of predicting the hot spot temperature, providing useful information for circuit reliability study as well as high power circuit design and optimization. Examples of the circuit analysis incorporating the electro-thermal model for a substrateless-and a membranebased multiplier circuits, operating up to 200 GHz, are demonstrated. Compared to simulations without thermal model, the simulations with electro-thermal model agree better with the measurement results. For the substrateless multiplier, the error between the simulated and measured peak output power is reduced from ~ 13 % to ~ 4 % by including the thermal effect.
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